www.fairchildsemi.com 2 OF 4 6/05/01 DS300312
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-65 to +125 °C
Storage Temperature T
STG
-65 to +150 °C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec °C
Continuous Forward Current I
F
100 mA
Forward Current (pw, 1µs; 200Hz) I
F
10 A
Reverse Voltage V
R
3V
Power Dissipation (T
A
= 25°C)
(1)
P
D
170 mW
Power Dissipation (T
C
= 25°C)
(2)
P
D
1.3 W
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Emission Wavelength I
F
= 100 mA !
P
— 940 — nm
Emission Angle at 1/2 Power I
F
= 100 mA " — ±8 — Deg.
Forward Voltage I
F
= 100 mA V
F
— — 1.7 V
Reverse Leakage Current V
R
= 3 V I
R
— — 10 µA
Total Power LED55B
(7)
I
F
= 100 mA P
O
3.5 — — mW
Total Power LED55C
(7)
I
F
= 100 mA P
O
5.4 — — mW
Total Power LED56
(7)
I
F
= 100 mA P
O
1.5 — — mW
Rise Time 0-90% of output t
r
— 1.0 — µs
Fall Time 100-10% of output t
f
— 1.0 — µs
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C) (All measurements made under pulse conditions)
NOTE:
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip
1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P
O
, is the total power radiated by the device into a solid angle of 2 # steradians.
GaAs INFRARED EMITTING DIODE
LED55B LED55C LED56
