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BFS25A,115

P1-P3P4-P6P7-P9P10-P12P13-P13
December 1997 4
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
40
30
10
0
20
MRC038 - 1
150
P
tot
(mW)
T
s
(
o
C)
Fig.3 DC current gain as a function of collector
current.
V
CE
=1 V; T
j
=25 C.
handbook, halfpage
MRC037
0
20
40
60
80
100
10
−1
10
−2
10
−3
110
I
C
(mA)
h
FE
Fig.4 Feedback capacitance as a function of
collector-base voltage.
I
C
=0; f=1 MHz.
handbook, halfpage
MRC031
0
0.1
0.2
0.3
0.4
0.5
012345
V (V)
CB
C
re
(pF)
Fig.5 Transition frequency as a function of
collector current.
f = 1 GHz; T
amb
=25 C.
handbook, halfpage
MRC032
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5
f
T
(GHz)
I
C
(mA)
1 V
= 3 V
CE
V
December 1997 5
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
In Figs 7 to 9, G
UM
= maximum unilateral power gain;
MSG = maximum stable gain; G
max
= maximum available
gain.
Fig.6 Gain as a function of collector current.
V
CE
= 1 V; f = 500 MHz; T
amb
=25 C.
handbook, halfpage
MRC035
0
5
10
15
20
25
0 0.5 1 1.5 2 2.5
MSG
G
UM
gain
(dB)
I
C
(mA)
Fig.7 Maximum unilateral power gain as a
function of collector current.
f = 1 GHz; T
amb
=25 C.
handbook, halfpage
0
4
8
12
16
20
0 0.5 1 1.5 2 2.5
I
C
(mA)
G
UM
(dB)
MRC036
1 V
= 3 V
CE
V
Fig.8 Gain as a function of frequency.
I
C
= 0.5 mA; V
CE
=1 V; T
amb
= 25 C.
handbook, halfpage
MRC034
0
10
20
30
40
50
0.01 0.1 1 10
f (GHz)
MSG
G
UM
G
max
gain
(dB)
Fig.9 Gain as a function of frequency.
I
C
= 1 mA; V
CE
=1 V; T
amb
=25 C.
handbook, halfpage
MRC033
0
10
20
30
40
50
10
−1
10
−2
110
MSG
G
UM
G
max
gain
(dB)
f (GHz)
December 1997 6
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
Fig.10 Minimum noise figure as a function of
collector current.
V
CE
=1 V; T
amb
=25 C.
handbook, halfpage
4
2
1
0
3
MCD145
10
−1
110
F
(dB)
I
C
(mA)
f = 2 GHz
1 GHz
500 MHz
Fig.11 Minimum noise figure as a function of
frequency.
V
CE
=1 V; T
amb
=25 C.
handbook, halfpage
4
2
1
0
3
MCD146
10
2
10
4
10
3
F
(dB)
f (MHz)
I
C
= 2 mA
1 mA
0.5 mA
Fig.12 Noise circle.
I
C
= 1 mA; V
CE
=1 V;
f = 500 MHz; Z
o
=50 .
handbook, full pagewidth
MRC075
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
stability
circle
pot. unst.
region
F = 6 dB
1
F = 4 dB
10 dB
12 dB
F = 2.5 dB
MSG = 13.9 dB
Γ
OPT
F
min
= 1.9 dB
P1-P3P4-P6P7-P9P10-P12P13-P13

BFS25A,115

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Buy BFS25A,115
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors TAPE-7 TNS-RFSS
Lifecycle:
New from this manufacturer.
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