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SQJQ404E-T1_GE3

P1-P3P4-P6P7-P8
SQJQ404E
www.vishay.com
Vishay Siliconix
S18-0260-Rev. A, 05-Mar-18
4
Document Number: 76570
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
Drain Source Breakdown vs. Junction Temperature
Threshold Voltage
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Safe Operating Area
10
100
1000
10000
0.5
0.8
1.1
1.4
1.7
2.0
-50-250 255075100125150175
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
2nd line
I
D
= 40 A
V
GS
= 10 V
10
100
1000
10000
40
43
46
49
52
55
-50-250 255075100125150175
Axis Title
1st line
2nd line
2nd line
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
2nd line
I
D
= 1 mA
10
100
1000
10000
-2.0
-1.4
-0.8
-0.2
0.4
1.0
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
2nd line
I
D
= 5 mA
I
D
= 250 µA
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
2nd line
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
0.000
0.002
0.004
0.006
0.008
0.010
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 25 °C
T
J
= 150 °C
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
(1)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
I
DM
limited
Limited by R
DS(on)
(1)
T
C
= 25 °C
Single pulse
BVDSS limited
100 ms, 1 s, 10 s, DC
10 ms
1 ms
100 µs
I
D
limited
SQJQ404E
www.vishay.com
Vishay Siliconix
S18-0260-Rev. A, 05-Mar-18
5
Document Number: 76570
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76570
.
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
10
Normalized Effective Transient
Thermal Impedance
1000
0.2
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
1001
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
10
Normalized Effective Transient
Thermal Impedance
100
0.2
0.1
Duty cycle = 0.5
1
0.02
0.05
Single pulse
Package Information
www.vishay.com
Vishay Siliconix
Revision: 06-Oct-14
1
Document Number: 67734
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK
®
8 x 8L Case Outline
DIM.
MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 1.70 1.80 1.90 0.067 0.071 0.075
A1 0.00 0.08 0.13 0.000 0.003 0.005
A3 0.55 0.62 0.70 0.022 0.024 0.028
b 0.92 1.00 1.08 0.036 0.039 0.043
b1 1.02 1.10 1.18 0.040 0.043 0.046
b2 7.80 7.90 8.00 0.307 0.311 0.315
c 0.20 0.25 0.30 0.008 0.010 0.012
D 8.00 8.10 8.25 0.315 0.319 0.325
D1 7.80 7.90 8.00 0.307 0.311 0.315
D2 6.70 6.80 6.90 0.264 0.268 0.272
D3 2.85 2.95 3.05 0.112 0.116 0.120
D4 6.11 6.21 6.31 0.241 0.244 0.248
e1.95
2.00 2.05
0.077
0.079 0.081
E 7.90 8.00 8.10 0.311 0.315 0.319
E1 6.12 6.22 6.32 0.241 0.245 0.249
E2 3.94 4.04 4.14 0.140 0.159 0.163
E3 4.69 4.79 4.89 0.185 0.189 0.193
F 0.05 0.10 0.15 0.002 0.004 0.006
L 0.62 0.72 0.82 0.024 0.028 0.032
L1 0.92 1.07 1.22 0.036 0.042 0.048
K 0.80 0.90 1.00 0.031 0.035 0.039
W 0.30 0.40 0.50 0.012 0.016 0.020
W1 0.30 0.40 0.50 0.012 0.016 0.020
W2 4.39 4.49 4.59 0.173 0.177 0.181
W3 4.54 4.64 4.74 0.179 0.183 0.187
θ 6° 10° 14° 6° 10° 14°
θ10°3°8°0°3°8°
C14-0891-Rev. A, 06-Oct-14
DWG: 6026
E
b
b1
e
E1
b2
D1
D
A1
θ
1
L1
L
0.25 gauge line
W
A
C
Top view (single)
Bottom view (dual)
A3
Bottom view (single)
θ
K
b2
E
b
b1
e
E1
D1
D
Top view (dual)
D3 K
D3
F
E2
W2
W1
W3
E3
D4
D2
E2
W2
W1
W3
E3
D4
P1-P3P4-P6P7-P8

SQJQ404E-T1_GE3

Mfr. #:
Buy SQJQ404E-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V Vds 20V Vgs PowerPAK 8 x 8L
Lifecycle:
New from this manufacturer.
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