2004 Oct 28 2
Philips Semiconductors Product specification
NPN high-voltage transistors 2N5550; 2N5551
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 160 V).
APPLICATIONS
• Switching and amplification in high voltage applications
such as telephony.
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package. PNP complements: 2N5400 and 2N5401.
PINNING
PIN DESCRIPTION
1 collector
2 base
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM279
1
2
3
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
2N5550 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54
2N5551
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
2N5550 − 160 V
2N5551 − 180 V
V
CEO
collector-emitter voltage open base
2N5550 − 140 V
2N5551 − 160 V
V
EBO
emitter-base voltage open collector − 6V
I
C
collector current (DC) − 300 mA
I
CM
peak collector current − 600 mA
I
BM
peak base current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 630 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
