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VN750PSTR-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27
VN750PS-E Electrical specifications
Doc ID 16782 Rev 3 19/27
2.9 SO-8 maximum demagnetization energy (V
CC
= 13.5 V)
Figure 26. SO-8 maximum turn-off current versus inductance
C: T
jstart
= 125 °C repetitive pulse
A: T
jstart
= 150 °C single pulse
B: T
jstart
= 100 °C repetitive pulse
Demagnetization Demagnetization Demagnetization
t
V
IN
, I
L
1
10
100
0.1 1 10 100
L(mH)
I
LMAX (A)
A
B
C
Note:
Values are generated with R
L
=0
Ω
.In case of repetitive pulses, T
jstart
(at beginning of each demagnetization) of every pulse
must not exceed the temperature specified above for curves A and B.
Package and PCB thermal data VN750PS-E
20/27 Doc ID 16782 Rev 3
3 Package and PCB thermal data
3.1 SO-8 thermal data
Figure 27. PC board
Figure 28. R
thj-amb
vs PCB copper area in open box free air condition
.
Note:
Layout condition of R
th
and Z
th
measurements (PCB FR4 area = 58 mm x 58 mm, PCB thickness = 2 mm, Cu
thickness=35 µm, Copper areas: 0.14 cm
2
, 0.8 cm
2
, 2 cm
2
).
70
75
80
85
90
95
100
105
110
00.511.522.5
PCB Cu heatsink area (cm^2)
RTHj_am b (ºC/W)
SO-8 at 2 pins connected to TAB
VN750PS-E Package and PCB thermal data
Doc ID 16782 Rev 3 21/27
Figure 29. SO-8 thermal impedance junction ambient single pulse
Equation 1: pulse calculation formula
where δ = t
P
/T
Figure 30. Thermal fitting model of a single channel
0.01
0.1
1
10
100
1000
0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)
ZTH (°C/W)
0.5 cm
2
2 cm
2
Z
THδ
R
TH
δ Z
THtp
1 δ–()+⋅=
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27

VN750PSTR-E

Mfr. #:
Buy VN750PSTR-E
Manufacturer:
STMicroelectronics
Description:
Power Switch ICs - Power Distribution High Side Driver 60mOhm 6A 36V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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