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MBR0530T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 8
1 Publication Order Number:
MBR0530T1/D
MBR0530, NRVB0530
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
The MBR0530 uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. These state−of−the−art
devices have the following features:
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL 94, V−0 @ 0.125 in
• Package Designed for Optimal Automated Board Assembly
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOD−123
CASE 425
STYLE 1
SCHOTTKY BARRIER
RECTIFIER
0.5 AMPERES
30 VOLTS
MARKING DIAGRAM
http://onsemi.com
B3 = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
Device Package Shipping
†
ORDERING INFORMATION
MBR0530T1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel **
MBR0530T3G SOD−123
(Pb−Free)
10.000 /
Tape & Reel ***
NRVB0530T1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel **
NRVB0530T3G SOD−123
(Pb−Free)
10.000 /
Tape & Reel ***
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
B3 MG
G
1
MBR0530, NRVB0530
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30 V
Average Rectified Forward Current
(Rated V
R
, T
L
= 100°C)
I
F(AV)
0.5
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
5.5
A
Storage Temperature Range T
stg
−65 to +150 °C
Operating Junction Temperature T
J
−65 to +125 °C
Voltage Rate of Change (Rated V
R
) dv/dt 1000
V/ms
ESD Rating:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Ambient (Note 1)
R
q
JA
206 °C/W
Thermal Resistance − Junction−to−Lead
R
q
JL
150 °C/W
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 0.1 Amps, T
J
= 25°C)
(i
F
= 0.5 Amps, T
J
= 25°C)
v
F
0.375
0.43
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
C
= 25°C)
(V
R
= 15 V, T
C
= 25°C)
I
R
130
20
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
1
0.1
0.01
0.15
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
10
4
1000
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current
5 101520 30354025
100
10
1
0
T
J
= 125°C 75°C 25°C -40°C
75°C
25°C
I
R
, REVERSE CURRENT (A)μ
T
J
= 125°C
MBR0530, NRVB0530
http://onsemi.com
3
180
160
20
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
5101520 3025
140
120
100
0
TYPICAL CAPACITANCE AT 0 V = 170 pF
C, CAPACITANCE (pF)
40
60
80
1
0.875
0
LEAD TEMPERATURE (°C)
Figure 4. Current Derating (Lead)
67 74 81 88 13095
0.75
0.625
0.5
60
AVERAGE FORWARD CURRENT (AMP)
0.125
0.25
0.375
123116109102
DC
SQUARE WAVE
= p
= 5
= 10
I
pk
/I
av
= 20
0.35
0.315
0
I
F(AV)
, AVERAGE FORWARD CURRENT (AMP)
Figure 5. Power Dissipation
0.1 0.2 0.3 0.4 0.80.5
0.28
0.245
0.21
0
0.105
0.14
0.175
0.70.6
DC
SQUARE WAVE
= p
= 5
= 10
I
pk
/I
av
= 20
0.07
0.035
P
F(AV)
, AVERAGE POWER DISSIPATION (WATT)
T
J
= 125°C
P1-P3P4-P4

MBR0530T1G

Mfr. #:
Buy MBR0530T1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 0.5A 30V
Lifecycle:
New from this manufacturer.
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