2003 Jun 06 3
Philips Semiconductors Product specification
GSM800 EDGE power module BGF844
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
T
mb
=25°C; V
S
= 26 V; P
L
= 2.5 W; f = 869 to 894 MHz; Z
S
=Z
L
=50Ω; unless otherwise specified.
Note
1. G
Pi
is small signal in-band gain.
SYMBOL PARAMETER MIN. MAX. UNIT
V
S
DC supply voltage − 30 V
P
D
input drive power − 100 mW
P
L
load power − 27 W
T
stg
storage temperature −30 +100 °C
T
mb
operating mounting base temperature −20 +90 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DQ
quiescent current (pin 2) P
D
= 0 mW 245 280 320 mA
G
p
power gain 28 30 32 dB
∆G
p freq
gain flatness over frequency
range
− 0.2 1 dB
∆G
p pwr
gain flatness over power band P
L
= 25 mW up to 2.5 W −0.8 −0.2 +0.2 dB
G
OB
out of band gain small signal, P
D
= 0 dBm;
f < 869 MHz, f > 894 MHz
−−G
Pi max
+1
note 1
dB
VSWR
in
input VSWR − 1.6:1 2:1
IMD
r
reverse intermodulation f
i
=f
c
±200 kHz;
P
carrier
= 2.5 W;
P
interference
= −40 dBc;
−−67 −64 dBc
H
2
second harmonic −−38 −34 dBc
H
3
third harmonic −−61 −58 dBc
stability VSWR ≤ 3 : 1 through all
phases; V
S2
=25to28V
all spurious outputs more than 60 dB
below desired signal
ruggedness VSWR = 10 : 1 through all
phases; P
L
=5W
no degradation in output power
EDGE (P
L
= 2.5 W average)
η efficiency 13 16 − %
SR200 spectral regrowth;
EDGE GSM signal
200 kHz −−36 −35 dBc
SR400 400 kHz −−65 −63 dBc
SR600 600 kHz −−75 −73 dBc
EVM
rms
rms EDGE signal distortion − 0.4 1.2 %
EVM
M
peak EDGE signal distortion − 1.2 4 %
Intermodulation distortion (P
L
= 2.5 W average)
d
3
third order intermodulation carrier spacing = 200 kHz −−45 − dBc
d
5
fifth order intermodulation −−52 − dBc
d
7
seventh order intermodulation −−60 − dBc
