2
AT-64023 Absolute Maximum Ratings
Symbol Parameter Units
Absolute
Maximum
[1]
V
EBO
Emitter-Base Voltage V 2.2
V
CBO
Collector-Base Voltage V 40
V
CEO
Collector-Emitter Voltage V 20
I
C
Collector Current mA 200
P
T
Power Dissipation
[2,3]
W 3
T
j
Junction Temperature °C 200
T
STG
Storage Temperature °C -65 to 200
Thermal Resistance
[2,4]
:
θ
jc
= 40°C/W
Notes:
1. Permanent damage may occur if any
of these limits are exceeded.
2. T
case
= 25°C.
3. Derate at 25 mW/°C for T
c
> 80°C.
4. The small spot size of this technique
results in a higher, though more
accurate determination of θ
jc
than
do alternate methods. See MEASURE-
MENTS section “Thermal Resistance”
for more information.
Electrical Specications, T
A
= 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S
21E
|
2
Insertion Power Gain; V
CE
= 16 V, I
C
= 110 mA f = 2.0 GHz
f = 4.0 GHz
dB 6.5
2.0
P
1 dB
Power Output @ 1 dB Gain Compression
V
CE
= 16 V, I
C
= 110 mA
f = 2.0 GHz
f= 4.0 GHz
dBm
25.5
27.5
26.5
G
1 dB
1 dB Compressed Gain; V
CE
= 16 V, I
C
= 110 mA f = 2.0 GHz
f = 4.0 GHz
dB
7.0
12.5
9.5
η
T
Total Eciency
[1]
at 1 dB Compression:
V
CE
= 16 V, I
C
= 110 mA
f = 4.0 GHz % 35.0
h
FE
I
CBO
I
EBO
Forward Current Transfer Ratio; V
CE
= 8 V, I
C
= 110 mA
Collector Cuto Current; V
CB
= 16 V
Emitter Cuto Current; V
EB
= 1 V
—
µA
µA
20 50 200
100
5.0
Note:
1. η
T
=
(RF Output Power)/(RF Input Power + V
CE
I
C
).
