PSMN070-200P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 December 2010 7 of 13
NXP Semiconductors
PSMN070-200P
N-channel TrenchMOS SiliconMAX standard level FET
T
j
= 25 °C T
j
= 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
V
DS
> I
D
x R
DSon
V
DS
> I
D
x R
DSon
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 9. Forward transconductance as a function of
drain current; typical values
I
D
= 1 mA; V
DS
= V
GS
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 11. Gate-source threshold voltage as a function of
junction temperature
0
30
20
10
40
I
D
(A)
V
DS
(V)
0 2.01.60.8 1.20.4
003aae568
V
GS
= 10 V
8 V
6 V
5.2 V
5 V
4.8 V
4.6 V
4.4 V
4.2 V
0.08
0.12
0.04
0.16
0.20
R
DS(on)
(Ω)
0
I
D
(A)
0403010 20
003aae569
V
GS
= 10 V
8 V
6 V
5.2 V
5 V
4.8 V
4.2 V
4.4 V
4.6 V
003aae570
V
GS
(V)
0642
0
30
20
10
40
I
D
(A)
T
j
= 25 °C
T
j
= 175 °C
20
30
10
40
50
g
fs
(S)
0
I
D
(A)
0403010 20
003aae571
T
j
= 25 °C
T
j
=175 °C
1.3
2.1
2.9
a
0.5
003aae572
T
j
(°C)
−60 18010020
0.5
3.5
2.5
1.5
4.5
V
GS(th)
(V)
003aae573
T
j
(°C)
-60 18010020
typical
minimum
maximum
