BAP50-04W All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 2 — 25 October 2016 2 of 8
NXP Semiconductors
BAP50-04W
General purpose PIN diode
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
[1] Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Table 3. Marking
Type number Marking code
BAP50-04W 6W-
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Values are specified per diode.
Symbol Parameter Conditions Min Max Unit
V
R
continuous reverse voltage - 50 V
I
F
continuous forward current - 50 mA
P
tot
total power dissipation T
s
= 90 C - 240 mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature 65 +150 C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to soldering point 250 K/W
Table 6. Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
= 50 mA - 0.95 1.1 V
V
R
reverse voltage I
R
= 10 A 50 - - V
I
R
reverse current V
R
= 50 V - - 100 nA
C
d
diode capacitance f = 1 MHz; see Figure 1
V
R
= 0 V - 0.45 - pF
V
R
= 1 V - 0.35 0.6 pF
V
R
= 5 V - 0.30 0.5 pF
r
D
diode forward resistance f = 100 MHz; see Figure 2
I
F
= 0.5 mA
[1]
- 25 40
I
F
= 1 mA
[1]
- 14 25
I
F
= 10 mA
[1]
- 3 5
L
charge carrier life time when switched from I
F
10 mA to I
R
6mA;
R
L
100 ; measured at I
R
3 mA
- 1.05 - S
L
S
series inductance I
F
= 10 mA; f = 100 MHz - 1.60 - nH
