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DTC114YET1
P1-P3
P4-P6
P7-P9
P10-P11
DTC1
14EET1 Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Ty
p
Max
Unit
Input Resistor
TC1
14EET1
DTC124EET1
DTC144EET1
DTC1
14YET1
DTC1
14TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC1
15EET1
DTC144WET1
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
k
W
Resistor Ratio
DTC1
14EET1/DTC124EET1/DTC144EET1/
DTC1
15EET1
DTC1
14YET1
DTC143TET1/DTC1
14TET1
DTC123EET1/DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC144WET1D
R
1
/R
2
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
Figure 1. Derating Curve
250
200
150
100
50
0
−50
0
50
100
150
T
A
, AMBIENT TEMPERA
TURE (
°
C)
P
D
, POWER DISSIP
ATION (MILLIW
A
TTS)
R
q
JA
= 600
°
C/W
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT
THERMAL
RESIST
ANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 2. Normalized Thermal Response
DTC1
14EET1 Series
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS − DTC1
14EET1
V
in
, INPUT VOL
T
AGE
(VOL
TS)
I
C
, COLLECTOR CURRENT
(mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 3. V
CE(sat)
versus I
C
10
02
0
3
0
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
T
A
=−25
°
C
75
°
C
25
°
C
40
50
Figure 4. DC Current Gain
Figure 5. Output Capacitance
1
0.1
0.01
0.001
02
0
4
0
5
0
I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, MAXIMUM COLLECTOR VOL
T
AGE (VOL
TS
)
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
A
=75
°
C
25
°
C
−25
°
C
T
A
=−25
°
C
25
°
C
Figure 6. Output Current versus Input V
oltage
75
°
C
25
°
C
T
A
=−25
°
C
100
10
1
0.1
0.01
0.001
01
2
34
V
in
, INPUT VOL
TAGE (VOL
TS)
56
78
9
1
0
Figure 7. Input V
oltage versus Output
Current
50
01
0
2
0
3
0
4
0
4
3
1
2
0
V
R
, REVERSE BIAS VOL
TAGE (VOL
TS)
C
ob
, CAP
ACITANCE (pF)
75
°
C
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25
°
C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
DTC1
14EET1 Series
http://onsemi.com
6
TYPICAL ELECTRICAL CHARACTERISTICS − DTC123EET1
75
°
C
25
°
C
−25
°
C
Figure 8. V
CE(sat)
versus I
C
Figure 9. DC Current Gain
Figure 10. Output
Capacitance
Figure 1
1. Output Current versus Input V
oltage
V
in
, INPUT VOL
T
AGE (VOL
TS)
V
R
, REVERSE BIAS VOL
T
AGE (VOL
TS)
Figure 12. Input V
oltage versus Output
Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
50
40
20
10
0
I
C
, COLLECTOR CURRENT (mA)
10
0
10
1
100
10
1
0.001
V
CE(sat)
, COLLECTOR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN
4.5
1.5
45
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
0.5
1
2
4
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
1
0
9
8
7
10
30
20
10
0
0.1
1
40
50
V
in
, INPUT VOL
T
AGE (VOL
TS)
75
°
C
25
°
C
T
A
= −25
°
C
75
°
C
25
°
C
T
A
= −25
°
C
75
°
C
25
°
C
T
A
= −25
°
C
0.01
35
25
15
5
0.01
0.1
30
3.5
3
2.5
f = 1 MHz
I
E
= 0 V
T
A
= 25
°
C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V
CE
= 10 V
P1-P3
P4-P6
P7-P9
P10-P11
DTC114YET1
Mfr. #:
Buy DTC114YET1
Manufacturer:
ON Semiconductor
Description:
TRANS PREBIAS NPN 200MW SC75
Lifecycle:
New from this manufacturer.
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