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STTH108A

P1-P3P4-P6
October 2009 Doc ID 9342 Rev 3 1/6
6
STTH108
High voltage ultrafast rectifier
Features
■ Low forward voltage drop
■ High reliability
■ High surge current capability
■ Soft switching for reduced EMI disturbances
■ Planar technology
Description
The STTH108, which is using ST ultrafast high
voltage planar technology, is specially suited for
free-wheeling, clamping, snubbering,
demagnetization in power supplies and other
power switching applications.
Table 1. Device summary
Symbol Value
I
F(AV)
1 A
V
RRM
800 V
T
j
(max) 175 °C
V
F
(max) 1.25 V
K
A
K
A
SMA
(JEDEC DO-214AC)
STTH108A
DO-41
STTH108
www.st.com
Characteristics STTH108
2/6 Doc ID 9342 Rev 3
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.05 x I
F(AV)
+ 0.20 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 800 V
V
(RMS)
Voltage rms 560 V
I
F(AV)
Average forward current
SMA T
L
= 110 °C δ = 0.5
1A
DO-41 T
L
= 130 °C δ = 0.5
I
FSM
Forward Surge current t = 8.3 ms
SMA 20
A
DO-41 25
T
stg
Storage temperature range -50 to + 175 °C
T
j
Maximum operating junction temperature 175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
SMA 30
°C/W
Lead length = 10 mm DO-41 45
R
th(j-a)
Junction to ambient
Lead length = 10 mm DO-41 110
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
Reverse leakage
current
T
j
= 25 °C
V
R
= 800 V
5
µA
T
j
= 125 °C 1 50
V
F
Forward voltage drop
T
j
= 25 °C
I
F
= 1 A
1.65
V
T
j
= 125 °C 0.89 1.25
Table 5. Dynamic electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
Reverse
recovery time
T
j
= 25 °C
I
F
= 0.5 A,
I
rr
= 0.25 A
I
R
= 1 A
75 ns
t
fr
Forward
recovery time
T
j
= 25 °C
I
F
= 1 A,
dI
F
/dt = 50 A/ms
V
FR
= 1.1 x V
F
max
200 ns
V
FP
Forward
recovery voltage
T
j
= 25 °C
I
F
= 1 A,
dI
F
/dt = 50 A/ms
12 V
STTH108 Characteristics
Doc ID 9342 Rev 3 3/6
Figure 1. Conduction losses versus average
current
Figure 2. Forward voltage drop versus
forward current
P(W)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
I (A)
F(AV)
T
δ
=tp/T
tp
δ = 1
δ = 0.05
δ = 0.5
δ = 0.2
δ = 0.1
0.1
1.0
10.0
100.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
I (A)
FM
V (V)
FM
T =25°C
(maximum values)
j
T =150°C
(maximum values)
j
T =150°C
(typical values)
j
Figure 3. Relative variation of thermal
impedance junction ambient versus
pulse duration (DO-41)
Figure 4. Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4) (SMA)
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
t (s)
p
T
δ
=tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
epoxy FR4, leads = 10 mm
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z/R
th(j-c) th(j-c)
t (s)
p
T
δ
=tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Figure 5. Thermal resistance junction to
ambient versus copper surface
under each lead (DO-41)
Figure 6. Thermal resistance junction to
ambient versus copper surface
under each lead (SMA)
R (°C/W)
th(j-a)
0
10
20
30
40
50
60
70
80
90
100
110
120
012345678910
S(cm²)
epoxy printed circuit board FR4, copper thickness: 35 µm
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R (°C/W)
th(j-a)
S(cm²)
epoxy printed circuit board FR4, copper thickness: 35 µm
P1-P3P4-P6

STTH108A

Mfr. #:
Buy STTH108A
Manufacturer:
STMicroelectronics
Description:
Rectifiers 1.0 Amp 800 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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