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BGY1085A,112

P1-P3P4-P6P7-P8
DATA SHEET
Product specification
Supersedes data of 1997 Apr 15
2001 Oct 25
DISCRETE SEMICONDUCTORS
BGY1085A
1000 MHz, 18.5 dB gain push-pull
amplifier
dbook, halfpage
M3D252
2001 Oct 25 2
NXP Semiconductors Product specification
1000 MHz, 18.5 dB gain push-pull
amplifier
BGY1085A
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures
excellent reliability.
DESCRIPTION
Hybrid high amplifier module for
CATV systems operating over a
frequency range of 40 to 1000 MHz
at a supply voltage of +24 V (DC).
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output
Fig.1 Simplified outline.
alfpage
7
8
9
2
351
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 18 19 dB
f=1000MHz 18.5 dB
I
tot
total current consumption (DC) V
B
=24V 240 mA
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
RF input voltage 65 dBmV
T
stg
storage temperature 40 +100 C
T
mb
operating mounting base temperature 20 +100 C
2001 Oct 25 3
NXP Semiconductors Product specification
1000 MHz, 18.5 dB gain push-pull
amplifier
BGY1085A
CHARACTERISTICS
Table 1 Bandwidth 40 to 1000 MHz; T
case
=30C; Z
S
=Z
L
=75
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 18 19 dB
f = 1000 MHz 18.5 dB
SL slope cable equivalent f = 40 to 1000 MHz 0 2dB
FL flatness of frequency response f = 40 to 1000 MHz 0.3 dB
S
11
input return losses f = 40 to 80 MHz 20 dB
f = 80 to 160 MHz 18.5 dB
f=160to320MHz 17 dB
f=320to640MHz 15.5 dB
f=640to1000MHz 14 dB
S
22
output return losses f = 40 to 80 MHz 20 dB
f = 80 to 160 MHz 18.5 dB
f=160to320MHz 17 dB
f=320to640MHz 15.5 dB
f=640to1000MHz 14 dB
CTB composite triple beat 85 channels flat;
V
o
=44dBmV;
measured at 595.25 MHz
58 dB
110 channels flat;
V
o
=44dBmV;
measured at 745.25 MHz
53 dB
150 channels flat;
V
o
=40dBmV;
measured at 985.25 MHz
53 dB
X
mod
cross modulation 85 channels flat;
V
o
=44dBmV;
measured at 55.25 MHz
58 dB
110 channels flat;
V
o
=44dBmV;
measured at 55.25 MHz
54 dB
150 channels flat;
V
o
=40dBmV;
measured at 55.25 MHz
54 dB
CSO composite second order
distortion
85 channels flat;
V
o
=44dBmV;
measured at 596.5 MHz
60 dB
110 channels flat;
V
o
=44dBmV;
measured at 746.5 MHz
56 dB
150 channels flat;
V
o
=40dBmV;
measured at 986.5 MHz
56 dB
P1-P3P4-P6P7-P8

BGY1085A,112

Mfr. #:
Buy BGY1085A,112
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier CATV P/P AMP 18.5dB
Lifecycle:
New from this manufacturer.
Delivery:
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