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MC74HC1G32DTT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. 14
1 Publication Order Number:
MC74HC1G32/D
MC74HC1G32
Single 2-Input OR Gate
The MC74HC1G32 is a high speed CMOS 2−input OR gate
fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The MC74HC1G32 output drive current is 1/2 compared to
MC74HC series.
Features
• High Speed: t
PD
= 7 ns (Typ) at V
CC
= 5 V
• Low Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
• High Noise Immunity
• Balanced Propagation Delays (t
pLH
= t
pHL
)
• Symmetrical Output Impedance (I
OH
= I
OL
= 2 mA)
• Chip Complexity: FET = 44
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Figure 1. Pinout
V
CC
IN B
IN A
OUT Y
GND
Figure 2. Logic Symbol
IN A
IN B
OUT Y
≥ 1
1
2
34
5
L
L
H
H
L
H
L
H
FUNCTION TABLE
Inputs Output
AB
L
H
H
H
Y
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
PIN ASSIGNMENT
1
2
3 GND
IN B
IN A
4
5V
CC
OUT Y
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MARKING
DIAGRAMS
H4 = Device Code
M = Date Code*
G = Pb−Free Package
SC−88A / SOT−353 / SC−70
DF SUFFIX
CASE 419A
TSOP−5 / SOT−23 / SC−59
DT SUFFIX
CASE 483
H4 M G
G
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
1
5
H4 M G
G
M
1
5
MC74HC1G32
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage *0.5 to )7.0 V
V
IN
DC Input Voltage *0.5 to V
CC
)0.5 V
V
OUT
DC Output Voltage *0.5 to V
CC
)0.5 V
I
IK
DC Input Diode Current $20 mA
I
OK
DC Output Diode Current $20 mA
I
OUT
DC Output Sink Current $12.5 mA
I
CC
DC Supply Current per Supply Pin $25 mA
T
STG
Storage Temperature Range *65 to )150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias )150 °C
q
JA
Thermal Resistance SC70−5/SC−88A/SOT−353 (Note 1)
SOT23−5/TSOP−5/SC59−5
350
230
°C/W
P
D
Power Dissipation in Still Air at 85°C SC70−5/SC−88A/SOT−353
SOT23−5/TSOP−5/SC59−5
150
200
mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
u2000
u200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) ±500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm by 1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage 2.0 6.0 V
V
IN
DC Input Voltage 0.0 V
CC
V
V
OUT
DC Output Voltage 0.0 V
CC
V
T
A
Operating Temperature Range *55 )125
°C
t
r
, t
f
Input Rise and Fall Time V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
0
0
0
0
1000
600
500
400
ns
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
NORMALIZED FAILURE RATE
TIME, YEARS
T
J
= 130°C
T
J
= 120°C
T
J
= 110°C
T
J
= 100°C
T
J
= 90°C
T
J
= 80°C
MC74HC1G32
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3
DC ELECTRICAL CHARACTERISTICS
V
CC
T
A
= 255C T
A
v 855C *555C v T
A
v 1255C
Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
V
IH
Minimum High−Level
Input Voltage
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.20
1.5
2.1
3.15
4.20
1.5
2.1
3.15
4.20
V
V
IL
Maximum Low−Level
Input Voltage
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.80
0.5
0.9
1.35
1.80
0.5
0.9
1.35
1.80
V
V
OH
Minimum High−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OH
= −20 mA
2.0
3.0
4.5
6.0
1.9
2.9
4.4
5.9
2.0
3.0
4.5
6.0
1.9
2.9
4.4
5.9
1.9
2.9
4.4
5.9
V
V
IN
= V
IH
or V
IL
I
OH
= −2 mA
I
OH
= −2.6 mA
4.5
6.0
4.18
5.68
4.31
5.80
4.13
5.63
4.08
5.58
V
OL
Maximum Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 20 mA
2.0
3.0
4.5
6.0
0.0
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 2 mA
I
OL
= 2.6 mA
4.5
6.0
0.17
0.18
0.26
0.26
0.33
0.33
0.40
0.40
I
IN
Maximum Input
Leakage Current
V
IN
= 6.0 V or GND 6.0 ±0.1 ±1.0 ±1.0
mA
I
CC
Maximum Quiescent
Supply Current
V
IN
= V
CC
or GND 6.0 1.0 10 40
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 6.0 ns)
T
A
= 255C T
A
v 855C *555C v T
A
v 1255C
Symbol Parameter Test Conditions Min Typ Max Min Max Min Max Unit
t
PLH
,
t
PHL
Maximum Propagation
Delay, Input A or B to Y
V
CC
= 5.0 V C
L
= 15 pF 3.5 15 20 25 ns
V
CC
= 2.0 V C
L
= 50 pF
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
20
12
8
7
100
27
20
17
125
35
25
21
155
90
35
26
t
TLH
,
t
THL
Output Transition Time
V
CC
= 5.0 V C
L
= 15 pF 3 10 15 20 ns
V
CC
= 2.0 V C
L
= 50 pF
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
25
16
11
9
125
35
25
21
155
45
31
26
200
60
38
32
C
IN
Maximum Input
Capacitance
5 10 10 10 pF
Typical @ 255C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Note 6) 10 pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
P1-P3P4-P6

MC74HC1G32DTT1G

Mfr. #:
Buy MC74HC1G32DTT1G
Manufacturer:
ON Semiconductor
Description:
Logic Gates 2-6V Single 2-Input OR
Lifecycle:
New from this manufacturer.
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