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VS-GB300LH120N

P1-P3P4-P6P7-P7
VS-GB300LH120N
www.vishay.com
Vishay Semiconductors
Revision: 12-Jun-15
1
Document Number: 94784
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Molding Type Module IGBT,
Chopper in 1 Package, 1200 V and 300 A
FEATURES
•Low V
CE(on)
SPT + IGBT technology
• 10 μs short circuit capability
•V
CE(on)
with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverter for motor drive
• AC and DC servo drive amplifier
• Uninterruptible power supply (UPS)
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
Note
(1)
Repetitive rating: pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 80 °C 300 A
V
CE(on)
(typical)
at I
C
= 300 A, 25 °C
2.0 V
Speed 8 kHz to 30 kHz
Package Double INT-A-PAK
Circuit Chopper low side switch
Double INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200
V
Gate to emitter voltage V
GES
± 20
Collector current I
C
T
C
= 25 °C 500
A
T
C
= 80 °C 300
Pulsed collector current I
CM
(1)
t
p
= 1 ms 600
Diode continuous forward current I
F
T
C
= 80 °C 300
Diode maximum forward current I
FM
t
p
= 1 ms 600
Maximum power dissipation P
D
T
J
= 150 °C 1645 W
Short circuit withstand time t
SC
T
J
= 125 °C 10 μs
RMS isolation voltage V
ISOL
f = 50 Hz, t = 1 min 2500 V
VS-GB300LH120N
www.vishay.com
Vishay Semiconductors
Revision: 12-Jun-15
2
Document Number: 94784
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 300 A, T
J
= 25 °C - 2.0 -
V
GE
= 15 V, I
C
= 300 A, T
J
= 125 °C - 2.2 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 12.0 mA, T
J
= 25 °C 5.0 6.2 7.0
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 5.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 300 A, R
g
= 4.7 ,
V
GE
= ± 15 V, T
J
= 25 °C
- 574 -
ns
Rise time t
r
- 133 -
Turn-off delay time t
d(off)
- 563 -
Fall time t
f
- 120 -
Turn-on switching loss E
on
- 23.9 -
mJ
Turn-off switching loss E
off
- 25.3 -
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 300 A, R
g
= 4.7 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 604 -
ns
Rise time t
r
- 137 -
Turn-off delay time t
d(off)
- 629 -
Fall time t
f
- 167 -
Turn-on switching loss E
on
- 31.5 -
mJ
Turn-off switching loss E
off
- 35.9 -
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz
- 21.2 -
nFOutput capacitance C
oes
-1.42-
Reverse transfer capacitance C
res
-0.94-
SC data I
SC
t
sc
10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 900 V, V
CEM
1200 V
- 1800 - A
Internal gate resistance R
g
-1.0-
Stray inductance L
CE
- - 20 nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.35 - m
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage V
F
I
F
= 300 A
T
J
= 25 °C - 1.82 2.25
V
T
J
= 125 °C - 1.95 -
Diode reverse recovery charge Q
rr
I
F
= 300 A, V
R
= 600 V,
dI
F
/dt = -2360 A/μs,
V
GE
= -15 V
T
J
= 25 °C - 20.2 -
μC
T
J
= 125 °C - 40.1 -
Diode peak reverse recovery current I
rr
T
J
= 25 °C - 170 -
A
T
J
= 125 °C - 250 -
Diode reverse recovery energy E
rec
T
J
= 25 °C - 8.2 -
mJ
T
J
= 125 °C - 21.7 -
VS-GB300LH120N
www.vishay.com
Vishay Semiconductors
Revision: 12-Jun-15
3
Document Number: 94784
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature T
J
- - 150
°C
Storage temperature range T
STG
-40 - 125
Junction to case
IGBT
R
thJC
- - 0.076
K/WDiode - - 0.100
Case to sink R
thCS
Conductive grease applied - 0.035 -
Mounting torque
Power terminal screw: M6 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 5.0
Weight 300 g
0
0.5
1
1.5
2
2.5 3 3.5 4
I
C
(A)
0
400
200
100
300
500
600
V
CE
(V)
V
GE
= 15 V
25 °C
125 °C
I
C
(A)
0
678 101191213
400
200
100
300
500
600
V
GE
(V)
V
CE
= 20 V
125 °C
25 °C
0
20
10
30
40
60
50
70
80
90
100
0 200100 300 400 500 600
I
C
(A)
E
on
, E
off
(mJ)
E
on
E
off
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 4.7 Ω
V
CC
= 600 V
0
50
100
150
200
250
010 20304050
R
g
(Ω)
E
on
, E
off
(mJ)
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 300 A
V
CC
= 600 V
E
on
E
off
P1-P3P4-P6P7-P7

VS-GB300LH120N

Mfr. #:
Buy VS-GB300LH120N
Manufacturer:
Vishay Semiconductors
Description:
IGBT Modules Output & SW Modules - DIAP IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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