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STPS1L60ZF

P1-P3P4-P6P7-P9P10-P12P13-P15
Characteristics
STPS1L60
4/15
DocID7504 Rev 10
1.1 Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current
Figure 2: Average forward current versus ambient
temperature (δ = 0.5)
Figure 3: Average forward current versus ambient
temperature (δ = 0.5)
Figure 4: Average forward current versus ambient
temperature (δ = 0.5)
Figure 5: Average forward current versus ambient
temperature (δ = 0.5)
Figure 6: Normalized avalanche power derating
versus pulse duration (T
j
= 125 °C)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0 0.2 0.4 0.6 0.8 1.0 1.2
δ = 0.05
δ = 0.1
δ = 0.2 δ = 0.5 δ = 1
T
δ
= tp/T
tp
P
F(AV)
(W)
I
F(AV)
(A)
0
1
2
3
4
5
0 25 50 75 100 125 150 175
R
th(j-a)
= R
th(j-l)
T
δ
= tp/T
tp
SMA
T
amb
(°C)
I
F(AV)
(A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 25 50 75 100 125 150 175
R
th(j-a)
= R
th(j-l)
T
δ
= tp/T
tp
DO-41
T
amb
(°C)
I
F(AV)
(A)
I
F(AV)
(A)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100 125 150 175
R
th(j-a)
= R
th(j-c)
T
δ
= tp/T
tp
STmite flat
T
amb
(°C)
I
F(AV)
(A)
0
1
2
3
4
5
6
0 25 50 75 100 125 150 175
R
th(j-a)
= R
th(j-l)
T
δ
= tp/T
tp
SOD123Flat
T
amb
(°C)
P (t
p
)
P (10 µs)
ARM
ARM
0.001
0.01
0.1
1
1 10 100 1000
t (µs)
p
STPS1L60
Characteristics
DocID7504 Rev 10
5/15
Figure 7: Relative variation of thermal impedance
junction to ambient versus pulse duration
Figure 8: Relative variation of thermal impedance
junction to ambient versus pulse duration
Figure 9: Relative variation of thermal impedance
junction to ambient versus pulse duration
Figure 10: Relative variation of thermal impedance
junction to lead versus pulse duration
Figure 11: Reverse leakage current versus reverse
voltage applied (typical values)
Figure 12: Junction capacitance versus reverse
voltage applied (typical values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Single pulse
SMA
Z
th(j-a)
/R
th(j-a)
t
p
(s)
Z
th(j-a)
/R
th(j-a)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Single pulse
DO-41
t
p
(s)
Z
th(j-a)
/R
th(j-a)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Single pulse
STmite flat
t
p
(s)
Z
th(j-l)
/R
th(j-l)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Single pulse
SOD123Flat
t
p
(s)
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 5 10 15 20 25 30 35 40 45 50 55 60
T
j
= 150 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 75 °C
T
j
= 50 °C
V
R
(V)
I
R
(mA)
10
100
1000
1 10 100
F = 1 MHz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
C(pF)
V
R
(V)
Characteristics
STPS1L60
6/15
DocID7504 Rev 10
0
20
40
60
80
100
120
5 10 15 20 25
R
th(j-a)
R
th(j-l)
DO-41
R
th
(°C/W)
L
leads
(mm)
Figure 13: Forward voltage drop versus forward
current (typical values)
Figure 14: Thermal resistance junction to ambient
versus copper surface under each lead
(typical values)
Figure 15: Thermal resistance junction to ambient
versus copper surface under tab (typical values)
Figure 16: Thermal resistance junction to ambient
versus copper surface under each lead
(typical values)
Figure 17: Thermal resistance versus lead length
0.01
0.10
1.00
10.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
T
j
= 25 °C
T
j
= 125 °C
T
j
= 75 °C
I
F
(A)
V
F
(V)
0
50
100
150
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
SMA
R
th(j-a)
(°C/W)
S
Cu
(cm²)
Epoxy printed board FR4, e
Cu
= 35 µm
R
th(j-a)
(°C/W)
0
50
100
150
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
STmite flat
S
Cu
(cm²)
Epoxy printed board FR4, e
Cu
= 35 µm
R
th(j-a)
(°C/W)
0
50
100
150
200
250
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
S
Cu
(cm²)
Epoxy printed board FR4, e
Cu
= 35 µm
SOD123Flat
P1-P3P4-P6P7-P9P10-P12P13-P15

STPS1L60ZF

Mfr. #:
Buy STPS1L60ZF
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers Low Drop Power Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
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