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IRKH136/12

P1-P3P4-P6P7-P9P10-P12
135 A
140 A
160 A
Bulletin I27117 rev. C 03/02
1
SERIES
IRK.136, .142, .162
NEW INT-A-pak Power Modules
I
T(AV)
135 140 160 A
@ T
C
85 85 85 °C
I
T(RMS)
300 310 355 A
I
TSM
@ 50Hz 3200 4500 4870 A
@ 60Hz 3360 4712 5100 A
I
2
t @ 50Hz 51.5 102 119 KA
2
s
@ 60Hz 47 92.5 108 KA
2
s
I
2
√t 515.5 1013 1190 KA
2
√s
V
RRM
400 to 1600 V
T
J
range - 40 to 125 °C
Major Ratings and Characteristics
Features
High Voltage
Electrically Isolated by DBC Ceramic ( Al
2
O
3
)
3500 V
RMS
Isolating Voltage
Industrial Standard Package
High Surge Capability
Glass Passivated Chips
Modules uses High Voltage Power thyristor/diodes
in three Basic Configurations
Simple Mounting
UL E78996 approved
Parameters IRK.136.. IRK.142.. IRK.162.. Units
THYRISTOR/DIODE and
THYRISTOR/THYRISTOR
Applications
DC Motor Control and Drives
Battery Charges
Welders
Power Converters
Lighting Control
Heat and Temperature Control
CASE STYLE NEW INT-A-PAK
www.irf.com
IRK.136, .142, .162 Series
2
Bulletin I27117 rev. C 03/02
www.irf.com
Type number Voltage V
RRM
/V
DRM
, Maximum repetitive V
RSM
/V
DSM
, Maximum non-repetitive I
RRM /
I
DRM
Code peak reverse voltage peak reverse voltage @ 125°C
VVm A
IRK.136 04 400 500 50
IRK.142 08 800 900
IRK.162 12 1200 1300
14 1400 1500
16 1600 1700
I
T(AV)
Max. average on-state current 135 140 160 A 180° conduction, half sine wave
@ Case temperature 85 85 85 °C
I
T(RMS)
Max. RMS on-state current 300 310 355 A as AC switch
I
TSM
Maximum peak, one-cycle 3200 4500 4870 A t = 10ms No voltage
on-state, non-repetitive 3360 4712 5100 t = 8.3ms reapplied
surge current 2700 3785 4100 t = 10ms 100% V
RRM
2800 3963 4300 t = 8.3ms reapplied Sine half wave,
I
2
t Maximum I
2
t for fusing 51.5 102 119 KA
2
s t = 10ms No voltage Initial T
J
= T
J
max.
47 92.5 108 t = 8.3ms reapplied
36.5 71.6 84 t = 10ms 100% V
RRM
33.3 65.4 76.7 t = 8.3ms reapplied
I
2
√t Maximum I
2
√t for fusing 515.5 1013 1190 KA
2
√s t = 0.1 to 10ms, no voltage reapplied
V
T
(TO)1
Low level value of threshold 0.86 0.83 0.8 V (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), @ T
J
max.
voltage
V
T
(TO)2
High level value of threshold 1.05 1 0.98 (I > π x I
T
(AV)
), @ T
J
max.
voltage
r
t1
Low level value on-state 2.02 1.78 1.67 mΩ (16.7% x π x I
T
(AV)
< I < π x I
T
(AV)
), @ T
J
max.
slope resistance
r
t2
High level value on-state 1.65 1.43 1.38 (I > π x I
T
(AV)
), @ T
J
max.
slope resistance
V
TM
Maximum forward voltage drop 1.57 1.55 1.54 V I
TM
= π x I
T(AV)
, T
J
= 25°C, 180°conduction
I
H
Maximum holding current 200 mA Anode supply = 6V initial I
T
= 30A, T
J
= 25°C
I
L
Maximum latching current 400 mA Anode supply = 6V resistive load = 1Ω
Gate pulse: 10V, 100µs, T
J
= 25°C
t
gd
Typical delay time 1 T
J
= 25
o
C Gate Current=1A dIg/dt=1A/µs
t
gr
Typical rise time 2 µs T
J
= 25
o
C Vd=0,67% V
DRM
t
q
Typical turn-off time 50 - 200 I
TM
= 300 A; -dI/dt = 15 A/µs; T
J
= T
J
max
V
r
= 50 V; dV/dt = 20 V/µs; Gate 0 V, 100Ω
Parameter IRK.136 IRK.142 IRK.162 Units Conditions
Forward Conduction
Switching
Electrical Specifications
Voltage Ratings
IRK.136, .142, .162 Series
3
Bulletin I27117 rev. C 03/02
www.irf.com
Thermal and Mechanical Specifications
T
J
Max. junction operating -40 to 125 °C
temperature range
T
stg
Max. storage temperature -40 to 150 °C
range
R
thJC
Max. thermal resistance, 0.18 0.18 0.16 K/W DC operation, per junction
junction to case
R
thCS
Max. thermal resistance, 0.05 K/W Mounting surface smooth, flat and greased
case to heatsink Per module
T Mounting IAP to heatsink 4 to 6 Nm
torque ± 10% busbar to IAP 4 to 6
wt Approximate weight 200 (7.1) g(oz)
Case Style New Int-A-Pak
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.
Triggering
P
GM
Max. peak gate power 12 W tp ≤ 5ms, T
J
= T
J
max.
P
G(AV)
Max. average gate power 3 W f=50Hz, T
J
= T
J
max.
I
GM
Max. peak gate current 3 A tp ≤ 5ms, T
J
= T
J
max.
-V
GT
Max. peak negative 10 V
gate voltage
V
GT
Max. required DC gate 4 V T
J
= - 40°C Anode supply = 6V, resistive
voltage to trigger 2.5 T
J
= 25°C load; Ra = 1Ω
1.7 T
J
= T
J
max.
I
GT
Max. required DC gate 270 T
J
= - 40°C Anode supply = 6V, resistive
current to trigger 150 mA T
J
= 25°C load; Ra = 1Ω
80 T
J
= T
J
max.
V
GD
Max. gate voltage 0.3 V @ T
J
= T
J
max., rated V
DRM
applied
that will not trigger
I
GD
Max. gate current 10 mA
that will not trigger
di/
dt
Max. rate of rise of 300 A/µs @ T
J
= T
J
max., I
TM
= 400A
rated V
DRM
applied
turned-on current
Sinusoidal conduction @ T
J
max. Rectangular conduction @ T
J
max.
Devices Units
180
o
120
o
90
o
60
o
30
o
180
o
120
o
90
o
60
o
30
o
IRK.136 0.007 0.01 0.013 0.0155 0.017 0.009 0.012 0.014 0.015 0.017
IRK.142 0.0019 0.0019 0.0020 0.0020 0.0021 0.0018 0.0022 0.0023 0.0023 0.0020 K/W
IRK.162 0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Parameter IRK.136 IRK.142 IRK.162 Units Conditions
Parameter IRK.136 IRK.142 IRK.162 Units Conditions
Blocking
I
RRM
Maximum peak reverse and 50 mA T
J
= 125
o
C
I
DRM
off-state leakage current
V
INS
RMS isolation voltage 3500 V 50Hz, circuit to base, all terminals shorted, t = 1s
dV/dt critical rate of rise of off-state voltage 1000 V/µs T
J
= T
J
max., exponential to 67% rated V
DRM
P1-P3P4-P6P7-P9P10-P12

IRKH136/12

Mfr. #:
Buy IRKH136/12
Manufacturer:
Vishay
Description:
SCR DBL LOSCR 1200V 135A INTAPAK
Lifecycle:
New from this manufacturer.
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