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NTTFS4H07NTAG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 3
1 Publication Order Number:
NTTFS4H07N/D
NTTFS4H07N
Power MOSFET
25 V, 66 A, Single N−Channel, m8−FL
Features
• Optimized Design to Minimize Conduction and Switching Losses
• Optimized Package to Minimize Parasitic Inductances
• Optimized material for improved thermal performance
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Performance DC-DC Converters
• System Voltage Rails
• Netcom, Telecom
• Servers & Point of Load
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain-to-Source Voltage V
DSS
25 V
Gate-to-Source Voltage V
GS
±20 V
Continuous Drain Current R
q
JA
(T
A
= 25°C, Note 1)
I
D
18.5 A
Power Dissipation R
q
JA
(T
A
= 25°C, Note 1)
P
D
2.64 W
Continuous Drain Current R
q
JC
(T
C
= 25°C, Note 1)
I
D
66 A
Power Dissipation R
q
JC
(T
C
= 25°C, Note 1)
P
D
33.8 W
Pulsed Drain Current (t
p
= 10 ms)
I
DM
216 A
Single Pulse Drain-to-Source Avalanche
Energy (Note 1)
(I
L
= 32 A
pk
, L = 0.1 mH) (Note 3)
E
AS
51 mJ
Drain to Source dV/dt dV/dt 7 V/ns
Maximum Junction Temperature T
J(max)
150 °C
Storage Temperature Range T
STG
−55 to
150
°C
Lead Temperature Soldering Reflow (SMD
Styles Only), Pb-Free Versions (Note 2)
T
SLD
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm
2
(or 1 in
2
) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at T
J
= 25°C,
V
GS
= 10 V, I
L
= 21 A, E
AS
= 22 mJ.
THERMALCHARACTERISTICS
Parameter
Symbol Max Units
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
R
q
JA
R
q
JC
47.3
3.7
°C/W
4. Thermal Resistance R
q
JA
and R
q
JC
as defined in JESD51−3.
www.onsemi.com
V
GS
MAX R
DS(on)
TYP Q
GTOT
4.5 V
7.1 mW
5.7 nC
N−CHANNEL MOSFET
10 V
4.8 mW
12.4 nC
PIN CONNECTIONS
m8−FL (3.3 x 3.3 mm)
(Top View) (Bottom View)
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
ORDERING INFORMATION
G (4)
S (1,2,3)
D (5−8)
NTTFS4H07N
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
25 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
15.5
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 20 V
T
J
= 25°C 1.0
mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= 20 V 100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.1 2.1 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
3.7 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 30 A 3.8 4.8
mW
V
GS
= 4.5 V I
D
= 15 A 5.8 7.1
Forward Transconductance g
FS
V
DS
= 12 V, I
D
= 15 A 49 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
771
pF
Output Capacitance C
OSS
525
Reverse Transfer Capacitance C
RSS
34
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 12 V; I
D
= 30 A
5.7
nC
Threshold Gate Charge Q
G(TH)
2.9
Gate−to−Source Charge Q
GS
2.5
Gate−to−Drain Charge Q
GD
1.26
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 12 V; I
D
= 30 A 12.4 nC
Gate Resistance R
G
T
A
= 25°C 1.0 2
W
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 12 V, I
D
= 15 A,
R
G
= 3.0 W
7.6
ns
Rise Time t
r
32
Turn−Off Delay Time t
d(OFF)
11.7
Fall Time t
f
2.13
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
d(ON)
V
GS
= 10 V, V
DS
= 12 V,
I
D
= 15 A, R
G
= 3.0 W
5
ns
Rise Time t
r
28.3
Turn−Off Delay Time t
d(OFF)
14.5
Fall Time t
f
1.65
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C 0.78 1.1
V
T
J
= 125°C 0.65
Reverse Recovery Time t
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 10 A
23.4
ns
Charge Time t
a
11.6
Discharge Time t
b
11.8
Reverse Recovery Charge Q
RR
8
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTTFS4H07N
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
3.02.52.01.51.00.50
0
20
40
60
4.02.52.01.51.00.50
0
Figure 3. On−Resistance vs. V
GS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
(V) I
D
, DRAIN CURRENT (A)
981076543
0.003
0.005
7060403010
0.002
0.004
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.7
0.8
1.0
1.1
1.2
1.4
1.5
1.7
2520155
1E−10
1E−08
1E−07
1E−06
1E−04
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (A)
30
70
0.008
50
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.005
0.006
150
0.9
1.3
1.6
I
D
= 20 A
V
GS
= 10 V
T
J
= 25°C
V
GS
= 3.6 V
T
J
= 25°C
T
J
= −55°C
V
DS
= 5 V
T
J
= 125°C
I
D
= 30 A
T = 25°C
V
GS
= 4.5 V
V
GS
= 10 V
T
J
= 85°C
T
J
= 125°C
T
J
= 150°C
T
J
= 25°C
V
GS
= 0 V
10
V
GS
= 3.4 V
V
GS
= 3.2 V
50
20
40
60
30
70
10
50
3.0 3.5
0.003
0.007
1E−09
10
1E−05
V
GS
= 3.0 V
3.8 V
0.004
0.006
0.007
0.008
V
GS
= 10 V to 4 V
20
P1-P3P4-P6P7-P7

NTTFS4H07NTAG

Mfr. #:
Buy NTTFS4H07NTAG
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET U8FL 25V 66A 4.8MOHM
Lifecycle:
New from this manufacturer.
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