TSM2306
30V N-Channel MOSFET
Document Number:
DS_P0000047 1
Version: B15
SOT-23
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package
Packing
TSM2306CX RFG
SOT-23 3Kpcs / 7” Reel
Note: “G” denote for Green Product
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current I
D
3.5 A
Pulsed Drain Current I
DM
±20 A
Continuous Source Current (Diode Conduction)
a,b
I
S
1.7 A
Maximum Power Dissipation
Ta = 25
o
C
P
D
1.25
W
Ta = 75
o
C 0.8
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨ
JC
75
°C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
130 °C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
D
(A)
30
57 @ V
GS
=10V 3.5
94 @ V
GS
=4.5V 2.8
N-Channel MOSFET
1. Gate
2. Source
3. Drain
