AON6354
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage
1.4 1.8 2.2 V
2.75 3.3
T
J
=125°C 3.6 4.4
4 5.2 mΩ
g
FS
100 S
V
SD
0.7 1 V
I
S
40 A
C
iss
1330 pF
C
oss
360 pF
C
rss
55 pF
R
g
0.7 1.5 2.3 Ω
Q
g
(10V)
20 35 nC
Q
g
(4.5V)
10 18 nC
Q
gs
3.5 nC
Q
gd
3.5 nC
t
D(on)
8 ns
t
r
3 ns
t
D(off)
20 ns
mΩ
V
GS
=10V, V
DS
=15V, I
D
=20A
Total Gate Charge
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Gate resistance f=1MHz
I
DSS
µAZero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
ID=250µA, V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Turn-On DelayTime
V
DS
=0V, V
GS
=±20V
Maximum Body-Diode Continuous Current
Input Capacitance
Gate-Body leakage current
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
Diode Forward Voltage
DYNAMIC PARAMETERS
V
GS
=4.5V, I
D
=20A
Turn-On Rise Time
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
V
DS
=V
GS,
I
D
=250µA
Output Capacitance
Forward Transconductance
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=10V, I
D
=20A
t
rr
11 ns
Q
rr
17
nC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, di/dt=500A/µs
I
F
=20A, di/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on R
θJA
t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°
I. For application requiring slow >1ms turn-on/turn-off, please consult AOS FAE for proper product selection.
Rev.2.0: September 2017 www.aosmd.com Page 2 of 6
