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FCX1149ATA

P1-P3
SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - SEPTEMBER 1999
FEATURES
* 2W POWER DISSIPATION
* 20A Peak Pulse Current
* Excellent H
FE
Characteristics up to 10 Amps
* Extremely Low Saturation Voltage E.g. 45mv Typ.
* Extremely Low Equivalent On-resistance;
R
CE(sat)
67m at 3A
Partmarking Detail - 149
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-30 V
Collector-Emitter Voltage V
CEO
-25 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current ** I
CM
-10 A
Continuous Collector Current I
C
-3 A
Base Current I
B
-500 mA
Power Dissipation at T
amb
=25°C P
tot
1 †
2 ‡
W
W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
† recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX1149A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL
VALUE
UNIT CONDITIONS.
MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-30 V
I
C
=-100 A
Collector-Emitter
Breakdown Voltage
V
(BR)CES
-25 V
I
C
=-100 A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-25 V I
C
=-10mA*
Collector-Emitter
Breakdown Voltage
V
(BR)CEV
-25 V
I
C
=-100 A, V
EB
=+1V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V
I
E
=-100 A
Collector Cut-Off Current I
CBO
-0.3 -100 nA V
CB
=-24V
Emitter Cut-Off Current I
EBO
-0.3 -100 nA V
EB
=-4V
Collector Emitter Cut-Off
Current
I
CES
-0.3 -100 nA V
CES
=-20V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-45
-100
-140
-200
-230
-80
-170
-240
-300
-350
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-1mA*
I
C
=-0.5A, I
B
=-3mA*
I
C
=-1A, I
B
=-7mA*
I
C
=-3A, I
B
=-100mA*
I
C
=-4A, I
B
=-140mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-930 -1050 mV I
C
=-3A, I
B
=-100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-840 -1000 mV I
C
=-3A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
270
250
150
115
450
400
260
190
50
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-3.0A, V
CE
=-2V*
I
C
=-5.0A, V
CE
=-2V*
I
C
=-10.0A, V
CE
=-2V*
Transition Frequency f
T
135 MHz I
C
=-50mA, V
CE
=-10V
f=50MHz
Output Capacitance C
cb
50 pF V
CB
=-10V, f=1MHz
Switching Times t
on
150 ns I
C
=-4A, I
B
=-40mA,
V
CC
=-10V
t
off
270 ns
I
C
=-4A, I
B
= 40mA,
V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
FCX1149A
FCX1149A
1m 100
1m 100
1m 100 100m 100
1001m
1m 100
I
C
- Collector Current (A)
V
CE(sat)
v I
C
0
1.0
V
CE(sat)
- (V)
IC/IB=10
IC/IB=50
IC/IB=100
+25°C
-55°C
h
FE
- Typical Gain
750
+100°C
0
I
C
- Collector Current (A)
h
FE
v I
C
+25°C
+100°C
V
BE(on)
- (V)
1.2
-55°C
0
I
C
- Collector Current (A)
V
BE(on)
v I
C
+100°C
V
CE(sat)
- (V)
1.0
+25°C
0
I
C
- Collector Current (A)
V
CE(sat)
v I
C
+100°C
V
BE(sat)
- (V)
1.6
0.8
+25°C
0
I
C
- Collector Current (A)
V
BE(sat)
v I
C
1s
100ms
I
C
- Collector Current (A)
10
DC
10m
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100us
VCE=2V
+25°C
-55°C
IC/IB=100
VCE=2V
-55°C
IC/IB=100
10m 100m 1 10
0.2
0.4
0.6
0.8
IC/IB=200
10m 100m 1 10
0.2
0.4
0.6
0.8
10m 100m 1 10
250
500
10m 100m 1 10
0.4
0.8
10m 100m 1 10
0.4
1.2
110
100m
1
TYPICAL CHARACTERISTICS
P1-P3

FCX1149ATA

Mfr. #:
Buy FCX1149ATA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP Low Saturation
Lifecycle:
New from this manufacturer.
Delivery:
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