© 2008 IXYS All rights reserved
1 - 6
20081126f
GWM 120-0075P3
IXYS reserves the right to change limits, test conditions and dimensions.
V
DSS
= 75 V
I
D25
= 118 A
R
DSon typ.
= 3.7 mW
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
S2
L-
L1
L2
L3
G2
S1
G1
S3
G3
S4
G4
S5
G5
S6
G6
L+
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
R
DSon
on chip level at T
VJ
= 25°C
V
GS
= 10 V ; I
D
= 60 A T
VJ
= 125°C
3.7
8.4
5.5 mW
mW
V
GS(th)
V
DS
= 20 V; I
D
= 1 mA 2 4 V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 0.1
1 µA
mA
I
GSS
V
GS
=
±
20 V; V
DS
= 0 V 0.2 µA
Q
g
Q
gs
Q
gd
V
GS
= 10 V; V
DS
= 55 V; I
D
= 125 A
100
19
28
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V; V
DS
= 30 V
I
D
= 80 A; R
G
= 39 Ω
inductive load
80
80
510
100
ns
ns
ns
ns
E
on
E
off
E
recoff
0.12
0.40
0.02
mJ
mJ
mJ
R
thJC
R
thJH
with heat transfer paste (IXYS test setup) 1.3
1.0
1.6
K/W
K/W
MOSFETs
Symbol Conditions Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C 75 V
V
GS
±
20 V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
118
85
A
A
I
F25
I
F90
T
C
= 25°C (diode)
T
C
= 90°C (diode)
120
78
A
A
Surface Mount
Device
Straight leads
Bent leads
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 3 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
- bent leads (BL)
