DMN2019UTS-13 Datasheet DMN2019UTS-13 | P1-P3

DMN2019UTS

Document number: DS35556 Rev. 2 - 2

1 of 6

www.diodes.com

December 2012

DMN2019UTS

NEW PRODUCT

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(ON)

max

I

D

max

T

A

= 25°C

20V

18.5m @ V

GS

= 10V

5.4 A

21m @ V

GS

= 4.5V

5.0 A

24m @ V

GS

= 2.5V

4.6 A

31m @ V

GS

= 1.8V

3.5 A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

• Power management functions

• Load Switch

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected up to 2KV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: TSSOP-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.039 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN2019UTS-13 TSSOP-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

8

7

6

5

1

2

3

4

D

S1

G1

D

S2

G2

ESD PROTECTED TO 2kV

G1

S1 S2

G2

DD

N-Channel N-Channel

Top View

Bottom View

Top View

Pin Configuration

Internal Schematic

TSSOP-8

Top View

Logo

Part no

Year: “12” = 2012

Xth week: 01~53

1

4

8

5

N2019U

YY WW

DMN2019UTS

Document number: DS35556 Rev. 2 - 2

2 of 6

www.diodes.com

December 2012

DMN2019UTS

NEW PRODUCT

Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Thermal Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

P

D

0.78 W

Thermal Resistance, Junction to Ambient (Note 5)

R

θ

JA

161 °C/W

Thermal Resistance, Junction to Case (Note 5)

R

θ

JC

26 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150 °C

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

BV

DSS

20 - - V

V

GS

= 0V, I

D

= 250A

Zero Gate Voltage Drain Current

I

DSS

- - 1.0 µA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- - 10 µA

V

GS

= ±10V, V

DS

= 0V

Gate-Source Breakdown Voltage

BV

SGS

±12 - - V

V

DS

= 0V, I

G

= ±250μA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

V

GS

(

th

)

0.35 - 0.95 V

V

DS

= V

GS

, I

D

= 250A

Static Drain-Source On-Resistance

R

DS (ON)

-

15.5 18.5

m

V

GS

= 10V, I

D

= 7A

16.5 21

V

GS

= 4.5V, I

D

= 7A

17 21.5

V

GS

= 4.0V, I

D

= 7A

17.5 22.5

V

GS

= 3.6V, I

D

= 6.5A

18 23

V

GS

= 3.1V, I

D

= 6.5A

19 24

V

GS

= 2.5V, I

D

= 5.5A

24 31

V

GS

= 1.8V, I

D

= 3.5A

Forward Transfer Admittance

|Y

fs

|

- 13 - S

V

DS

= 5V, I

D

= 5A

Diode Forward Voltage

V

SD

- 0.7 1.0 V

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

C

iss

-

143

- pF

V

DS

= 10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

-

74

- pF

Reverse Transfer Capacitance

C

rss

-

29

- pF

Gate Resistance

R

g

- 202 -



V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge

Q

g

-

8.8

- nC

V

GS

= 4.5V, V

DS

= 10V,

I

D

= 6.5A

Gate-Source Charge

Q

g

s

-

1.4

- nC

Gate-Drain Charge

Q

g

d

-

3.0

- nC

Turn-On Delay Time

t

D

(

on

)

-

53

- ns

V

DD

= 10V, V

GS

= 4.5V,

R

L

= 10, R

G

= 6

Turn-On Rise Time

t

r

-

78

- ns

Turn-Off Delay Time

t

D

(

off

)

-

562

- ns

Turn-Off Fall Time

t

f

-

234

- ns

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

Characteristic Symbol Value Units

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±12 V

Continuous Drain Current (Note 5) V

GS

= 10V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

5.4

4.3

A

Continuous Drain Current (Note 5) V

GS

= 2.5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

4.6

3.7

A

Continuous Body Diode Forward Current (Note 5)

Steady

Stat

T

A

= +25°C

I

S

0.9 A

Pulsed Drain Current (Note 5) 10s pulse, duty cycle = 1%

I

DM

30 A

DMN2019UTS

Document number: DS35556 Rev. 2 - 2

3 of 6

www.diodes.com

December 2012

DMN2019UTS

NEW PRODUCT

0

5

10

15

20

25

30

0 0.5 1 1.5 2

Fig. 1 Typical Output Characteristic

V , DRAIN-SOURCE VOLTAGE (V)

DS

I, D

R

AI

N

C

U

R

E

N

T

(A)

D

V = 2.0V

GS

V = 1.5V

GS

V = 4.5V

GS

V = 8V

GS

V = 2.5V

GS

V = 3.0V

GS

0 0.5 1 1.5 2

Fig. 2 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)

GS

0

4

8

12

16

20

I, D

R

AIN

C

U

R

EN

T

(A)

D

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 5V

DS

0

0.01

0.02

0.03

0.04

0.05

0 5 10 15 20 25 30

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

V = 1.8V

GS

V = 4.5V

GS

V = 2.5V

GS

0

0.01

0.02

0.03

0.04

048121620

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 4.5V

GS

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

0.6

0.8

1.0

1.2

1.4

1.6

R

, D

R

AIN-S

O

U

R

C

E

ON-RESISTANCE (NORMALIZED)

DSON

V = 4.5V

I = 10A

GS

D

V = 2.5V

I = 5.5A

GS

D

0

0.01

0.02

0.03

0.04

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

R , DRAIN-SOURCE

ON-RESISTANCE ( )

DSON

Ω

V = 4.5V

I = 10A

GS

D

V = 2.5V

I = 5.5A

GS

D

DMN2019UTS-13

DMN2019UTS-13

Products related to this Datasheet