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BYT79X-600,127

P1-P3P4-P6P7-P9P10-P11
NXP Semiconductors
BYT79X-600
Rectifier diode ultrafast
BYT79X-600 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 27 May 2015 3 / 10
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse voltage - 600 V
V
RWM
crest working reverse voltage - 600 V
V
R
reverse voltage Square-wave; δ = 1.0 - 600 V
I
F(AV)
average forward current δ = 0.5 ; T
h
≤ 49 °C; Square-wave;
Fig. 1; Fig. 2
- 15 A
I
FRM
repetitive peak forward current δ = 0.5 ; t
p
= 25 µs; T
h
≤ 49 °C;
Square-wave
- 30 A
t
p
= 8.3 ms; T
j(init)
= 25 °C; sinusoidal
waveform
- 143 AI
FSM
non-repetitive peak forward
current
t
p
= 10 ms; T
j(init)
= 25 °C; sinusoidal
waveform
- 130 A
T
stg
storage temperature -55 150 °C
T
j
junction temperature - 150 °C
I
F(AV)
= I
F(RMS)
× √δ
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
003aab478
0
4
8
12
16
20
0 5 10 15
I
F(AV)
(A)
P
tot
(W)
a = 1.57
1.9
2.2
2.8
4.0
a = form factor = I
F(RMS)
/ I
T(AV)
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
NXP Semiconductors
BYT79X-600
Rectifier diode ultrafast
BYT79X-600 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 27 May 2015 4 / 10
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
with heatsink compound; Fig. 3 - - 4.8 K/WR
th(j-h)
thermal resistance
from junction to
heatsink
without heatsink compound - - 5.9 K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
in free air - 55 - K/W
001aaf045
1
10
- 1
10
Z
th(j-h)
(K/W)
10
- 3
10
- 2
t
p
(s)
10
- 6
10110
- 1
10
- 5
10
- 3
10
- 2
10
- 4
t
p
t
p
T
P
t
T
δ =
Fig. 3. Transient thermal impedance from junction to heatsink as a function of pulse width
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
- - 2500 V
C
isol
isolation capacitance from cathode to external heatsink - 10 - pF
NXP Semiconductors
BYT79X-600
Rectifier diode ultrafast
BYT79X-600 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 27 May 2015 5 / 10
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
F
= 15 A; T
j
= 25 °C; Fig. 4 - 1.16 1.38 VV
F
forward voltage
I
F
= 15 A; T
j
= 150 °C - 1.01 1.2 V
V
R
= 600 V; T
j
= 25 °C - 5 50 µAI
R
reverse current
V
R
= 600 V; T
j
= 100 °C - 0.2 0.8 mA
Dynamic characteristics
Q
r
recovered charge I
F
= 2 A; V
R
≥ 30 V; dI
F
/dt = 20 A/µs;
Fig. 5
- 40 70 nC
t
rr
reverse recovery time I
F
= 1 A; V
R
≥ 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; Fig. 5
- 50 60 ns
I
RM
peak reverse recovery
current
I
F
= 10 A; V
R
≥ 30 V; dI
F
/dt = 50 A/µs;
T
j
= 100 °C; Fig. 5
- 3 5.2 A
V
FR
forward recovery
voltage
I
F
= 10 A; dI
F
/dt = 10 A/µs; Fig. 6 - 3.2 - V
003aab479
0
10
20
30
40
50
0 0.6 1.2 1.8
V
F
(V)
I
F
(A)
(1) (2) (3)
(1) T
j
= 150 °C; typical values
(2) T
j
= 150 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 4. Forward current as a function of forward
voltage
001aab911
t
rr
time
100 %
10 %
I
F
dl
F
dt
I
R
I
RM
Q
r
Fig. 5. Forward recovery definitions
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BYT79X-600,127

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Manufacturer:
WeEn Semiconductors
Description:
Rectifiers Diode Ult Fast Recov Rectifier 600V 15A
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