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TLP626-4(F)

P1-P3P4-P6P7-P8
TLP626,TLP626-2,TLP626-4
2014-09-22
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP626, TLP626-2, TLP626-4
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA TLP626, −2 and −4 consist of gallium arsenide infrared
emitting diodes connected in inverse parallel, optically coupled to a
photo−transistor.
The TLP626−2 offers two isolated channels in an eight lead plastic DIP,
while the TLP626−4 provides four isolated channels in a sixteen plastic
DIP.
• Collector−emitter voltage: 55V (min)
• Current transfer ratio
Classification
Current Transfer Ratio (min)
Marking
of
Classification
Ta = 25°C Ta = −25~75°C
I
F
= ±1mA
V
CE
= 0.5V
I
F
= ±0.5mA
V
CE
= 1.5V
I
F
= ±1mA
V
CE
= 0.5V
Rank BV 200% 100% 100% BV
Standard 100% 50% 50% BV, blank
• Isolation voltage: 5000V
rms (
min)
• UL recognized: UL1577, file no.E67349
• BSI approved: BS EN60065: 2002 certificate no.7426
BS EN60950-1: 2002 certificate no.7427
• Note: Application type name for certification test,
please use standard product type name, i.e.
TLP626(BV): TLP626
Pin Configuration (top view)
1 : Anode
Cathode
2 : Cathode
Anode
3 : Emitter
4 : Collector
TLP626
1
2
4
3
1, 3, 5, 7 : Anode, Cathode
2, 4, 6, 8 : Cathode, Anode
9, 11, 13, 15 : Emitter
10, 12, 14, 16 : Collector
TLP626
–4
1
2
16
15
3
4
14
13
5
6
12
11
7
8
10
9
1, 3 : Anode
Cathode
2, 4 : Cathode
Anode
5, 7 : Emitter
6, 8 : Collector
TLP626
–2
1
2
8
7
3
4
6
5
TOSHIBA 11−5B2
Weight: 0.26 g (typ.)
TOSHIBA 11−10C4
Weight: 0.54 g (typ.)
TOSHIBA 11−20A3
Weight: 1.1 g (typ.)
Unit: mm
Start of commercial production
1984
/
04
TLP626,TLP626-2,TLP626-4
2014-09-22
2
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol
Rating
Unit
TLP626
TLP626−2
TLP626−4
LED
Forward current I
F
60 50 mA
Forward current derating ∆I
F
/ °C −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 39°C) mA / °C
Pulse forward current I
FP
1 (100μs pulse,100pps) A
Power dissipation (1 circuit) P
D
100 70 mW
Power dissipation derating (Ta ≥ 25°C, 1 circuit) ∆P
D
/ °C
−1.0 −0.7 mW / °C
Junction temperature T
j
125 °C
Detector
Collector−emitter voltage V
CEO
55 V
Emitter−collector voltage V
ECO
7 V
Collector current I
C
50 mA
Collector power dissipation (1 circuit) P
C
150 100 mW
Collector power dissipation derating
(Ta ≥ 25°C, 1 circuit)
∆P
C
/ °C
−1.5 −1.0 mW / °C
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Operating temperature range P
opr
−55 to 100 °C
Lead soldering temperature T
sol
260 (10s) °C
Total package power dissipation (1 circuit) P
T
250 150 mW
Total package power dissipation derating (Ta ≥ 25°C, 1 circuit) ∆P
T
/ °C −2.5 −1.5 mW / °C
Isolation voltage (Note 1) BV
S
5000 (AC, 1minute, R.H.≤60%) V rm s
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage V
CC
― 5 24 V
Forward current I
F(RMS)
― 1.6 20 mA
Collector current I
C
― 1 10 mA
Operating temperature T
opr
−25 ― 75 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP626,TLP626-2,TLP626-4
2014-09-22
3
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage V
F
I
F
= ±10mA 1.0 1.15 1.3 V
Reverse current I
F
V
F
= ±0.7V ― 2.5 20 μA
Capacitance C
T
V = 0, f = 1MHz ― 60 ― pF
Detector
Collector−emitter breakdown voltage
V
(BR)CEO
I
C
= 0.5mA 55 ― ― V
Emitter−collector breakdown voltage
V
(BR)ECO
I
E
= 0.1mA 7 ― ― V
Collector dark current I
CEO
V
CE
= 24V ― 10 100 nA
V
CE
= 24V, Ta = 85°C ― 2 50 μA
Capacitance collector to emitter
C
CE
V=0, f=1MHz ― 12 ― pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Current transfer ratio I
C
/ I
F
I
F
= ±1mA, V
CE
= 0.5V
rank BV
100 ― 1200
%
200 ― 1200
Low input CTR I
C
/ I
F
(low)
I
F
= ±0.5mA, V
CE
= 1.5V
rank BV
50 ― ―
%
100 ― ―
Collector−emitter saturation voltage V
CE(sat)
I
C
= 0.5mA, I
F
= ±1mA ― ― 0.4
V
I
C
= 1mA, I
F
= ±1mA
rank BV
― 0.2 ―
― ― 0.4
Off−state collector current I
C
(off) V
F
= ±0.7V, V
CE
= 24V ― 1 10 μA
CTR symmetry *1 I
C
(ratio)
I
C
(I
F
= −1mA) / I
C
(I
F
= 1mA) 0.5 ― 2 ―
Coupled Electrical Characteristics
(Ta =
−
25
～
75°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Current transfer ratio I
C
/ I
F
I
F
= 1mA, V
CE
= 0.5V
rank BV
50 ― ―
%
100 ― ―
Low input CTR I
C
/ I
F
(low)
I
F
= 0.5mA, V
CE
= 1.5V
rank BV
― 50 ―
%
― 100 ―
*1
I
C(ratio) =
V)5
CE
V
F1,
I
F
(I
C1
I
V)5
CE
V
F2,
I
F
(I
C2
I
==
==
I
F1
I
C2
I
C1
V
CE
I
F2
P1-P3P4-P6P7-P8

TLP626-4(F)

Mfr. #:
Buy TLP626-4(F)
Manufacturer:
Toshiba
Description:
Transistor Output Optocouplers 55Vceo 5000Vrms 4 channels
Lifecycle:
New from this manufacturer.
Delivery:
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