BFG325_XR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 15 September 2011 3 of 13
NXP Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
5. Limiting values
[1] T
sp
is the temperature at the soldering point of the collector pin.
6. Thermal characteristics
[1] T
sp
is the temperature at the soldering point of the collector pin.
7. Characteristics
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 15 V
V
CEO
collector-emitter voltage open base - 6 V
V
EBO
emitter-base voltage open collector - 2 V
I
C
collector current (DC) - 35 mA
P
tot
total power dissipation T
sp
90 C
[1]
- 210 mW
T
stg
storage temperature 65 +175 C
T
j
junction temperature - 175 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point T
sp
90 C
[1]
405 K/W
Table 7. Characteristics
T
j
=25
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off current I
E
=0A; V
CB
=5V - - 15 nA
h
FE
DC current gain I
C
=15mA; V
CE
= 3 V 60 100 200
C
CBS
collector-base capacitance V
CB
= 5 V; f = 1 MHz; emitter grounded - 0.26 0.4 pF
C
CES
collector-emitter capacitance V
CE
= 5 V; f = 1 MHz; base grounded - 0.27 - pF
C
EBS
emitter-base capacitance V
EB
= 0.5 V; f = 1 MHz; collector grounded - 0.53 - pF
f
T
transition frequency I
C
=15mA; V
CE
=3V; f=1GHz;
T
amb
=25C
-14-GHz
G
max
maximum power gain
[1]
I
C
=15mA; V
CE
=3V; f=1.8GHz;
T
amb
=25C
- 18.3 - dB
s
21
2
insertion power gain I
C
=15mA; V
CE
=3V; T
amb
=25C;
Z
S
=Z
L
=50
f = 1.8 GHz - 14 - dB
f=3GHz - 10 - dB
NF noise figure
s
=
opt
; I
C
=3mA; V
CE
=3V; f=2GHz - 1.1 - dB
P
L(1dB)
output power at 1 dB gain
compression
I
C
= 15 mA; V
CE
=3V; f=1.8GHz;
T
amb
=25C; Z
S
=Z
L
=50
-8.7-dBm
IP3 third order intercept point I
C
=15mA; V
CE
=3V; f=1.8GHz;
T
amb
=25C; Z
S
=Z
L
=50
- 19.4 - dBm
