2SC2229-Y(T6SAN2FM Datasheet 2SC2229-Y(MIT,F,M), 2SC2229-Y(MIT1,F,M, 2SC2229-Y(T6SAN2FM | P1-P3

2SC2229

2009-12-21

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)

2SC2229

Black and White TV Video Output Applications

High-Voltage Switching Applications

Driver Stage Audio Amplifier Applications

• High breakdown voltage: V

CEO

= 150 V (min)

• Low output capacitance: C

ob

= 5.0 pF (max)

• High transition frequency: f

T

= 120 MHz (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage V

CBO

200 V

Collector-emitter voltage V

CEO

150 V

Emitter-base voltage V

EBO

5 V

Collector current I

C

50 mA

Base current I

B

20 mA

Collector power dissipation P

C

800 mW

Junction temperature T

j

150 °C

Storage temperature range T

stg

−55 to 150 °C

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC TO-92MOD

JEITA ―

TOSHIBA 2-5J1A

Weight: 0.36 g (typ.)

2SC2229

2009-12-21

2

Electrical Characteristics

(Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current I

CBO

V

CB

= 200 V, I

E

= 0 ― ― 0.1 μA

Emitter cut-off current I

EBO

V

EB

= 5 V, I

C

= 0 ― ― 0.1 μA

DC current gain

h

FE

(Note 2)

V

CE

= 5 V, I

C

= 10 mA 70 ― 240

Collector-emitter saturation voltage V

CE (sat)

I

C

= 10 mA, I

B

= 1 mA ― ― 0.5 V

Base-emitter saturation voltage V

BE (sat)

I

C

= 10 mA, I

B

= 1 mA ― ― 1 V

Transition frequency f

T

V

CE

= 30 V, I

C

= 10 mA ― 120 ― MHz

Collector output capacitance C

ob

V

CB

= 10 V, I

E

= 0, f = 1 MHz ― 3.5 5 pF

Note 2: h

FE

classification O: 70 to 140, Y: 120 to 240

Marking

Note 3: A line under a Lot No. identifies the indication of product Labels.

Not underlined: `Pb`/INCLUDES > MCV

Underlined: `G`/RoHS COMPATIBLE or `G`/RoHS `Pb`

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

C2229

Lot No.

Note 3

Characteristics

indicator

Part No. (or abbreviation code)

2SC2229

2009-12-21

3

DC current gain h

FE

Collector-emitter voltage V

CE

(V)

Collector current I

C

(mA)

Base-emitter voltage V

BE

(V)

Collector current I

C

(mA)

Collector current I

C

(mA)

Collector current I

C

(mA)

Collector current I

C

(mA)

Collector-emitter saturation voltage

V

CE

(sat)

(V)

Collector current I

C

(mA)

DC current gain h

FE

Collector-emitter saturation voltage

V

CE

(sat)

(V)

1 0 3 10 30

500

100

10

30

50

100

300

Common emitter

Ta = 25°C

V

CE

= 2 V

10

5

0.5 1 3 30

2

0.3

0.03

1

10 100

Common emitter

I

C

/I

B

= 10

Ta = 100°C

25

0

0.5

0.05

0.1

1 0.5 3 30

1000

50

30

100

300

10 100

500

Common emitter

V

CE

= 5 V

Ta = 100°C

25

0

50

0

30

20

10

0.2 0.4 0.6

Common emitter

V

CE

= 5 V

Ta = 100°C

0.8

25 0

1.0 1.2 1.4

40

0.05

0.5

0.1

0.3

0.5

1

3

10 30 100 3 1

I

C

/I

B

= 20

10

5

Common emitter

Ta = 25°C

50

0

30

20

10

2 4 6

Common emitter

Ta = 25°C

400 300

I

B

= 50 μA

1000

8

200

150

100

10 12 14

40

500

I

C

– V

CE

I

C

– V

BE

h

FE

– I

C

h

FE

– I

C

V

CE (sat)

– I

C

V

CE (sat)

– I

C

2SC2229-Y(T6SAN2FM

2SC2229-Y(T6SAN2FM

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