www.vishay.com Document Number: 91205
6 S11-0446-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP17N50L, SiHFP17N50L
Vishay Siliconix
Fig. 12 - Maximum Safe Operating Area
Fig. 14a - Unclamped Inductive Test Circuit
Fig. 15a - Basic Gate Charge Waveform
Fig. 13 - Maximum Avalanche Energy vs. Drain Current
Fig. 14b - Unclamped Inductive Waveforms
Fig. 15b - Gate Charge Test Circuit
0.1
1
10
100
1000
10 100 1000 10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
Driver
A
15 V
20 V
Q
GS
Q
GD
Q
G
V
G
Charge
10 V
25 50 75 100 125 150
0
160
320
480
640
800
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
7A
10A
16A
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-