www.vishay.com Document Number: 91205
2 S11-0446-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP17N50L, SiHFP17N50L
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. C
OSS
eff. is a fixed capacitance that gives the same charging time as C
OSS
while V
DS
is rising fom 0 % to 80 % V
DS
.
C
OSS
eff. (ER) is a fixed capacitance that stores the same energy as C
OSS
while V
DS
is rising fom 0 % to 80 % V
DS
.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.50 -
Maximum Junction-to-Case (Drain) R
thJC
-0.56
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 500 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
Reference to 25 °C, I
D
= 1 mA
d
-0.60-V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 3.0 - 5.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 50 μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 2.0 mA
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 9.9 A
b
- 0.28 0.32 Ω
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 9.9 A
b
11 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 2760 -
pF
Output Capacitance C
oss
- 325 -
Reverse Transfer Capacitance C
rss
-37-
Output Capacitance C
oss
V
GS
= 0 V
V
DS
= 1.0 V , f = 1.0 MHz - 3690 -
V
DS
= 400 V , f = 1.0 MHz - 84 -
Effective Output Capacitance C
oss
eff.
V
DS
= 0 V to 400 V
- 159 -
Effective Output Capacitance
(Energy Related)
C
oss
eff. (ER) - 120 -
Internal Gate Resistance R
g
f = 1 MHz, open drain - 1.4 - Ω
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 16 A, V
DS
= 400 V
see fig. 7 and 15
b
- - 130
nC Gate-Source Charge Q
gs
--33
Gate-Drain Charge Q
gd
--59
Turn-On Delay Time t
d(on)
V
DD
= 250 V, I
D
= 16 A
R
G
= 7.5 Ω, V
GS
= 10 V
see fig. 14a and 14b
b
-21-
ns
Rise Time t
r
-51-
Turn-Off Delay Time t
d(off)
-50-
Fall Time t
f
-28-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--16
A
Pulsed Diode Forward Current
a
I
SM
--64
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 16 A, V
GS
= 0 V
b
--1.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C
I
F
= 16 A,
dI/dt = 100 A/μs
b
- 170 250
ns
T
J
= 125 °C - 220 330
Body Diode Reverse Recovery Charge Q
rr
T
J
= 25 °C - 470 710
μC
T
J
= 125 °C - 810 1210
Reverse Recovery Current I
RRM
T
J
= 25 °C - 7.3 11
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G
