Ver. DEDPublication date: April 2013
1
DB3X315E
Silicon epitaxial planar type
For high speed switching circuits
Features
Short reverse recovery time t
rr
Small reverse current I
R
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: 5D
Packaging
DB3X315E0L
Embossed type (Thermo-compression sealing): 3
000 pcs / reel (standard)
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Maximum peak reverse voltage V
RM
30 V
Forward current
Single
I
F
30
mA
Double
*
1
20
Peak forward current
Single
I
FM
150
mA
Double
*
1
110
Junction temperature T
j
125
°C
Operating ambient temperature T
opr
–40 to +85
°C
Storage temperature T
stg
–55 to +125
°C
Note)
*
1: Value of each diode in double diodes used.
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage
V
F1
I
F
= 1 mA 0.4
V
V
F2
I
F
= 30 mA 1.0
Reverse current I
R
V
R
= 30 V 300 nA
Terminal capacitance C
t
V
R
= 10 V, f = 1 MHz 1.4 pF
Reverse recovery time
*
1
t
rr
I
F
= I
R
=10 mA, I
rr
= 1 mA, R
L
= 100 Ω 1.0 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
*
1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100 Ω
10%
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse Output Pulse
Unit: mm
1: Anode-1
2: Anode-2
3: Cathode-1
Cathode-2
Panasonic Mini3-G3-B
JEITA SC-59A
Code TO-236AA/SOT-23
