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MJE210G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1 Publication Order Number:
MJE200/D
MJE200G(NPN),
MJE210G(PNP)
Complementary Silicon
Power Plastic Transistors
These devices are designed for low voltage, low−power, high−gain
audio amplifier applications.
Features
• High DC Current Gain
• Low Collector−Emitter Saturation Voltage
• High Current−Gain − Bandwidth Product
• Annular Construction for Low Leakage
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
40 Vdc
Collector−Base Voltage V
CB
25 Vdc
Emitter−Base Voltage V
EB
8.0 Vdc
Collector Current − Continuous I
C
5.0 Adc
Collector Current − Peak I
CM
10 Adc
Base Current I
B
1.0 Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
15
0.12
W
mW/_C
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
1.5
0.012
W
mW/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
8.34
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
83.4
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
5.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
25 VOLTS, 15 WATTS
http://onsemi.com
MJE200G
TO−225
(Pb−Free)
500 Units / Box
MARKING DIAGRAM
Y = Year
WW = Work Week
JE2x0 = Device Code
x = 0 or 1
G = Pb−Free Package
MJE210G
TO−225
(Pb−Free)
500 Units / Box
MJE210TG
TO−225
(Pb−Free)
500 Units / Box
3
BASE
EMITTER 1
COLLECTOR 2, 4
3
BASE
EMITTER 1
COLLECTOR 2, 4
PNP NPN
TO−225
CASE 77−09
STYLE 1
1
2
3
YWW
JE2x0G
MJE200G (NPN), MJE210G (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 10 mAdc, I
B
= 0)
V
CEO(sus)
25 −
Vdc
Collector Cutoff Current
(V
CB
= 40 Vdc, I
E
= 0)
(V
CB
= 40 Vdc, I
E
= 0, T
J
= 125_C)
I
CBO
−
−
100
100
nAdc
mAdc
Emitter Cutoff Current
(V
BE
= 8.0 Vdc, I
C
= 0)
I
EBO
− 100
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 1.0 Vdc)
(I
C
= 5.0 Adc, V
CE
= 2.0 Vdc)
h
FE
70
45
10
−
180
−
−
Collector−Emitter Saturation Voltage (Note 1)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 2.0 Adc, I
B
= 200 mAdc)
(I
C
= 5.0 Adc, I
B
= 1.0 Adc)
V
CE(sat)
−
−
−
0.3
0.75
1.8
Vdc
Base−Emitter Saturation Voltage (Note 1)
(I
C
= 5.0 Adc, I
B
= 1.0 Adc)
V
BE(sat)
− 2.5
Vdc
Base−Emitter On Voltage (Note 1)
(I
C
= 2.0 Adc, V
CE
= 1.0 Vdc)
V
BE(on)
− 1.6
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(I
C
= 100 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
f
T
65 −
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
MJE200G
MJE210G
C
ob
−
−
80
120
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300Ăms, Duty Cycle [ 2.0%.
2. f
T
= ⎪h
fe
⎪• f
test
.
16
20
Figure 1. Power Derating
T, TEMPERATURE (°C)
0
40 60 100 120 160
12
P
D
, POWER DISSIPATION (WATTS)
1.6
0
1.2
8.0 0.8
4.0
0.4
80 140
T
C
P
D
, POWER DISSIPATION (WATTS)
T
A
MJE200G (NPN), MJE210G (PNP)
http://onsemi.com
3
Figure 2. Switching Time Test Circuit
+11 V
25 ms
0
-9.0 V
R
B
-4 V
D
1
SCOPE
V
CC
+30 V
R
C
t
r
, t
f
≤ 10 ns
DUTY CYCLE = 1.0%
51
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
1K
I
C
, COLLECTOR CURRENT (AMPS)
V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
t, TIME (ns)
500
300
200
100
50
t
d
30
20
10
5
1
0.01 0.03 0.05 0.50.20.1 0.3 10
Figure 3. Turn−On Time
3
2
5213
t
r
MJE200
MJE210
0.02
t, TIME (ms)
0.01
0.02 0.05 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL RESISTANCE
q
JC
(t) = r(t) q
JC
q
JC
= 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
0 (SINGLE PULSE)
(NORMALIZED)
Figure 4. Thermal Response
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.1
0.02
0.01
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
30
7.0
0.7
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
Figure 5. Active Region Safe Operating Area
500ms
dc
5.0
20107.05.03.02.01.0
100ms
T
J
= 150°C
I
C
, COLLECTOR CURRENT (AMP)
0.2
0.5
1.0
2.0
3.0
0.3
1.0ms
5.0ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤ 150_C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
P1-P3P4-P6

MJE210G

Mfr. #:
Buy MJE210G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 5A 25V 15W PNP
Lifecycle:
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