Characteristics STPS40M100C
2/8 Doc ID 15522 Rev 3
1 Characteristics
When diodes 1 and 2 are used simultaneously
T
j
(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.560 x I
F(AV)
+ 0.004x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise stated)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(RMS)
Forward current rms 60 A
I
F(AV)
Average forward current δ = 0.5
T
c
= 125 °C Per diode 20
A
T
c
= 120 °C Per package 40
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 530 A
P
ARM
(1)
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 23 200 W
V
ARM
(2)
Maximum repetitive peak avalanche voltage t
p
< 1 µs T
j
< 150 °C, I
AR
< 58 A 120 V
V
ASM
(2)
Maximum single pulse peak avalanche voltage t
p
< 1 µs T
j
< 150 °C, I
AR
< 58 A 120 V
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(3)
150 °C
1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 11
3. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
<
1
Rth(j-a)
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode 1.4
°C/W
Total 0.95
R
th(c)
Coupling 0.5 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
--70µA
T
j
= 125 °C - 15 70 mA
T
j
= 25 °C
V
R
= 70 V
--40µA
T
j
= 125 °C - 7.5 40 mA
V
F
(2)
Forward voltage drop
T
j
= 125 °C I
F
= 5 A - 0.415 0.500 V
T
j
= 125 °C I
F
= 10A - 0.500 0.560
-
T
j
= 25 °C
I
F
= 20 A
--0.780
-
T
j
= 125 °C - 0.585 0.640
-
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
