IRF7703PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -40 ––– ––– V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.030 ––– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 28 V
GS
= -10V, I
D
= -6.0A
––– ––– 45 V
GS
= -4.5V, I
D
= -4.8A
V
GS(th)
Gate Threshold Voltage -1.0 ––– -3.0 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 10 ––– ––– S V
DS
= -10V, I
D
= -6.0A
––– ––– -15 V
DS
= -32V, V
GS
= 0V
––– ––– -25 V
DS
= -32V, V
GS
= 0V, T
J
= 70°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 20V
Q
g
Total Gate Charge ––– 41 62 I
D
= -6.0A
Q
gs
Gate-to-Source Charge ––– 16 25 nC V
DS
= -20V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 16 24 V
GS
= -4.5V
t
d(on)
Turn-On Delay Time ––– 43 ––– V
DD
= -20V
t
r
Rise Time ––– 405 ––– I
D
= -1.0A
t
d(off)
Turn-Off Delay Time ––– 155 ––– R
G
= 6.0Ω
t
f
Fall Time ––– 77 ––– V
GS
= -10V
C
iss
Input Capacitance ––– 5220 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 416 ––– pF V
DS
= -25V
C
rss
Reverse Transfer Capacitance ––– 337 ––– ƒ = 1.0kHz
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.2 V T
J
= 25°C, I
S
= -1.5A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 34 51 ns T
J
= 25°C, I
F
= -1.5A
Q
rr
Reverse Recovery Charge ––– 56 84 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
A
-24
-1.5
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
mΩ
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Surface mounted on 1 in square Cu board
