NXP Semiconductors
PMZ950UPE
20 V, P-channel Trench MOSFET
PMZ950UPE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 10 July 2014 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= -250 µA; V
GS
= 0 V; T
j
= 25 °C -20 - - V
V
GSth
gate-source threshold
voltage
I
D
= -250 µA; V
DS
= V
GS
; T
j
= 25 °C -0.45 -0.7 -0.95 V
V
DS
= -20 V; V
GS
= 0 V; T
j
= 25 °C - - -1 µAI
DSS
drain leakage current
V
DS
= -20 V; V
GS
= 0 V; T
j
= 150 °C - - -10 µA
V
GS
= 8 V; V
DS
= 0 V; T
j
= 25 °C - - 10 µA
V
GS
= -8 V; V
DS
= 0 V; T
j
= 25 °C - - -10 µA
V
GS
= -4.5 V; V
DS
= 0 V; T
j
= 25 °C - - -1 µA
I
GSS
gate leakage current
V
GS
= 4.5 V; V
DS
= 0 V; T
j
= 25 °C - - 1 µA
V
GS
= -4.5 V; I
D
= -500 mA; T
j
= 25 °C - 1.02 1.4 Ω
V
GS
= -4.5 V; I
D
= -500 mA; T
j
= 150 °C - 1.54 2.1 Ω
V
GS
= -2.5 V; I
D
= -200 mA; T
j
= 25 °C - 1.27 2.2 Ω
V
GS
= -1.8 V; I
D
= -40 mA; T
j
= 25 °C - 1.7 3.3 Ω
V
GS
= -1.5 V; I
D
= -10 mA; T
j
= 25 °C - 2.3 5 Ω
R
DSon
drain-source on-state
resistance
V
GS
= -1.2 V; I
D
= -1 mA; T
j
= 25 °C - 3.5 - Ω
g
fs
forward
transconductance
V
DS
= -10 V; I
D
= -500 mA; T
j
= 25 °C - 480 - mS
Dynamic characteristics
Q
G(tot)
total gate charge - 1.19 2.1 nC
Q
GS
gate-source charge - 0.17 - nC
Q
GD
gate-drain charge
V
DS
= -10 V; I
D
= -450 mA;
V
GS
= -4.5 V; T
j
= 25 °C
- 0.1 - nC
C
iss
input capacitance - 43 - pF
C
oss
output capacitance - 14 - pF
C
rss
reverse transfer
capacitance
V
DS
= -10 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 8 - pF
t
d(on)
turn-on delay time - 2.3 - ns
t
r
rise time - 5 - ns
t
d(off)
turn-off delay time - 13.5 - ns
t
f
fall time
V
DS
= -10 V; I
D
= -0.45 A; R
L
= 22 Ω;
V
GS
= -4.5 V; R
G(ext)
= 6 Ω; T
j
= 25 °C
- 6 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= -115 mA; V
GS
= 0 V; T
j
= 25 °C - -0.7 -1.2 V
NXP Semiconductors
PMZ950UPE
20 V, P-channel Trench MOSFET
PMZ950UPE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 10 July 2014 7 / 15
V
DS
(V)
0 -4-3-1 -2
aaa-013891
-1.0
-0.5
-1.5
-2.0
I
D
(A)
0.0
V
GS
= -4.5 V
-3.5 V
-3 V
-2.5 V
-1.8 V
-1.2 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-013892
V
GS
(V)
0.0 -1.5-1.0-0.5
-10
-5
-10
-4
-10
-3
-10
-2
I
D
(A)
-10
-6
min typ max
T
j
= 25 °C; V
DS
= -5 V
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
I
D
(V)
0.0 -2.0-1.5-0.5 -1.0
aaa-013893
1.0
0.5
1.5
2.0
R
DSon
(Ω)
0.0
V
GS
= -4.5 V
-3.5 V
-3 V
-2.5 V-1.8 V -2.2 V
T
j
= 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
0 -5-4-2 -3-1
aaa-013894
2
3
1
4
5
R
DSon
(Ω)
0
T
j
= 150 °C
T
j
= 25 °C
I
D
= -0.5 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NXP Semiconductors
PMZ950UPE
20 V, P-channel Trench MOSFET
PMZ950UPE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 10 July 2014 8 / 15
V
GS
(V)
0 -4-3-1 -2
aaa-013895
-0.50
-0.25
-0.75
-1.00
I
D
(A)
0.00
T
j
= 150 °C
T
j
= 25 °C
V
DS
> I
D
× R
DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
aaa-013896
1.00
0.75
1.25
1.50
a
0.50
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
aaa-013897
-0.5
-1.0
-1.5
V
GS(th)
(V)
0.0
min
typ
max
I
D
= -0.25 mA; V
DS
= V
GS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
aaa-013898
V
DS
(V)
-10
-1
-10
2
-10-1
10
10
2
C
(pF)
1
C
iss
C
oss
C
rss
f = 1 MHz; V
GS
= 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values

PMZ950UPEYL

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET Trench Mosfet 20V, P-channel
Lifecycle:
New from this manufacturer.
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