NXP Semiconductors
PMZ950UPE
20 V, P-channel Trench MOSFET
PMZ950UPE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 10 July 2014 8 / 15
V
GS
(V)
0 -4-3-1 -2
aaa-013895
-0.50
-0.25
-0.75
-1.00
I
D
(A)
0.00
T
j
= 150 °C
T
j
= 25 °C
V
DS
> I
D
× R
DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
aaa-013896
1.00
0.75
1.25
1.50
a
0.50
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
aaa-013897
-0.5
-1.0
-1.5
V
GS(th)
(V)
0.0
min
typ
max
I
D
= -0.25 mA; V
DS
= V
GS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
aaa-013898
V
DS
(V)
-10
-1
-10
2
-10-1
10
10
2
C
(pF)
1
C
iss
C
oss
C
rss
f = 1 MHz; V
GS
= 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values