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UG8GT-E3/45

P1-P3P4-P5
BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
1
Document Number: 88557
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commerical grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
8.0 A
V
RRM
300 V to 400 V
I
FSM
110 A
t
rr
35 ns
V
F
1.03 V
T
J
max. 150 °C
Package
TO-220AC, ITO-220AC,
TO-263AB
Diode variations Single die
TO-263AB
CASE
PIN 2
PIN 1
TO-220AC
BYV29, UG8 Series
ITO-220AC
BYV29F, UGF8 Series
BYV29B, UGB8 Series
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
PIN 2
PIN 1
1
2
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
BYV29-300 BYV29-400
UNIT
UG8FT UG8GT
Maximum repetitive peak reverse voltage V
RRM
300 400 V
Maximum working reverse voltage V
RWM
300 400 V
Maximum RMS voltage V
RMS
210 280 V
Maximum DC blocking voltage V
DC
300 400 V
Maximum average forward rectified current at T
C
= 100 °C I
F(AV)
8.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
110 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min V
AC
1500 V
BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
2
Document Number: 88557
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL
BYV29-300
UG8FT
BYV29-400
UG8GT
UNIT
Maximum instantaneous forward voltage
I
F
= 8 A
T
J
= 25 °C
V
F
(1)
1.25
VT
J
= 150 °C 1.03
I
F
= 20 A T
J
= 25 °C 1.40
Maximum DC reverse current at V
RRM
T
C
= 25 °C
I
R
10
μA
T
C
= 100 °C 350
Maximum reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
35 ns
Maximum reverse recovery time
I
F
= 1.0 A, dI/dt = 100 A/μs,
V
R
= 30 V, I
rr
= 0.1 I
RM
t
rr
50 ns
Maximum reverse recovery current
I
F
= 10 A, dI/dt = 50 A/μs,
V
R
= 30 V, T
C
= 100 °C
I
RM
5.5 A
Maximum recovered stored charged
I
F
= 2 A, dI/dt = 20 A/μs,
V
R
= 30 V, I
rr
= 0.1 I
RM
Q
rr
55 nC
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
BYV29
UG8
BYV29F
UGF8
BYV29B
UGB8
UNIT
Typical thermal resistance from junction to case R
JC
2.5 5.5 2.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC BYV29-400-E3/45 1.80 45 50/tube Tube
ITO-220AC BYV29F-400-E3/45 1.95 45 50/tube Tube
TO-263AB BYV29B-400-E3/45 1.77 45 50/tube Tube
TO-263AB BYV29B-400-E3/81 1.77 81 800/reel Tape and reel
TO-220AC BYV29-400HE3/45
(1)
1.80 45 50/tube Tube
ITO-220AC BYV29F-400HE3/45
(1)
1.95 45 50/tube Tube
TO-263AB BYV29B-400HE3/45
(1)
1.77 45 50/tube Tube
TO-263AB BYV29B-400HE3/81
(1)
1.77 81 800/reel Tape and reel
BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
3
Document Number: 88557
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
C
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Charateristics
Fig. 4 - Typical Reverse Leakage Charateristics
Fig. 5 - Reverse Switching Characteristics Per Leg
Fig. 6 - Typical Junction Capacitance
0
0
6
8
10
12
755025 100 125 150 175
4
2
Average Forward Rectied Current (A)
Case Temperature (°C)
Resistive or Inductive Load
0
25
50
75
100
125
150
1 10010
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
C
= 100 °C
8.3 ms Single Half Sine-Wave
0.40.2 0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
10
100
1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
20 6040 10080
0.01
0.1
10
1
100
1000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
0
25
50
20
40
60
80
100
120
140
160
75
100
125
Stored Charge/Reverse Recovery Time
(nC/ns)
Junction Temperature (°C)
dI/dt = 150 A/μs
dI/dt = 100 A/μs
dI/dt = 150 A/μs
dI/dt = 100 A/μs
dI/dt = 50 A/μs
dI/dt = 20 A/μs
dI/dt = 20 A/μs
t
rr
Q
rr
0.1 101 100
10
1
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
P1-P3P4-P5

UG8GT-E3/45

Mfr. #:
Buy UG8GT-E3/45
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 400 Volt 8.0A 35ns 110 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
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