VS-95SQ015, VS-95SQ015-M3
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Vishay Semiconductors
Revision: 09-Sep-11
1
Document Number: 93419
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Schottky Rectifier, 9 A
FEATURES
• 125 °C T
J
operation (V
R
< 5 V)
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and
long term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-95SQ015... axial leaded Schottky rectifier has been
optimized for ultralow forward voltage drop specifically for
the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 100 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
PRODUCT SUMMARY
Package DO-204AR
I
F(AV)
9 A
V
R
15 V
V
F
at I
F
0.25 V
I
RM
max. 348 mA at 100 °C
T
J
max. 100 °C
Diode variation Single die
E
AS
4.5 mJ
Cathode Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 9A
V
RRM
15 V
I
FSM
t
p
= 5 μs sine 2900 A
V
F
9 Apk, T
J
= 75 °C 0.25 V
T
J
Range - 55 to 100 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-95SQ015 VS-95SQ015-M3 UNITS
Maximum DC reverse voltage V
R
15 15 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 55 °C, rectangular waveform 9
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
2900
10 ms sine or 6 ms rect. pulse 400
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 9 mH 4.5 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by, T
J
maximum V
A
= 3 x V
R
typical
1A
