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RZE002P02TL

P1-P3P4-P5
RZE002P02
1/4
www.rohm.com
○
c
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
1.2V Drive
Pch
MOSFET
RZE002P02
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) High speed switching.
2) Small package (EMT3).
3) 1.2V drive.
zApplications
Switching
zPackage specifications zInner circuit
Package
Code
Taping
Basic ordering unit (pieces)
RZE002P02
TL
3000
Type
zAbsolute maximum ratings (Ta=25°C)
∗1
∗1
Parameter
VV
DSS
Symbol
VV
GSS
mAI
D
mA
I
DP
I
S
I
SP
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Souce current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
mA
mA
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
−20
±10
±200
±800
∗2
P
D
°CTch
°CTstg
Total power dissipation
Channel temperature
Range of storage temperature
150
−55 to +150
−800
mW
150
−100
zThermal resistance
Parameter
°C/W
Rth(ch-a)
Symbol Limits Unit
C
hannel to ambient 833
∗ Each terminal mounted on a recommended land
∗
(1) Source
(2) Gate
(3) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
∗1
(3)
(2)
(1)
(1)Source
(2)Gate
(3)Drain
EMT3
1.6
0.7
0.15
0.1Min.
0.55
0.2
1.6
1.0
0.3
0.8
(
2
)
0.5
0.5
(
3
)
0.2
(
1
)
Abbreviated symbol : YK
2/4
www.rohm.com
○
c
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
Data Sheet RZE002P02
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
−
Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
−±10 µAV
GS
= ±10V, V
DS
=0V
−20 −−VI
D
= −1mA, V
GS
=0V
−−−1 µAV
DS
= −20V, V
GS
=0V
−0.3 −−1.0 V V
DS
= −10V, I
D
= −100µA
− 0.8 1.2 I
D
= −200mA, V
GS
= −4.5V
− 1.0 1.5 Ω
Ω
Ω
Ω
Ω
I
D
= −100mA, V
GS
= −2.5V
−
−
−
1.3
1.6
2.4
2.2
3.5
9.6
I
D
= −100mA, V
GS
= −1.8V
I
D
= −40mA, V
GS
= −1.5V
I
D
= −10mA, V
GS
= −1.2V
0.2 −−SV
DS
= −10V, I
D
= −200mA
− 115 − pF V
DS
= −10V
− 10
6
− pF V
GS
= 0V
−
6
− pF f=1MHz
−
4
− ns
−
17
− ns
−
17
− ns
−−ns
VDD −10V
I
D
= −100mA
V
GS
= −4.5V
R
L
100Ω
R
G
= 10Ω
VDD −10V
I
D
= −200mA
V
GS
= −4.5V
R
L
50Ω
R
G
= 10Ω
Q
g
Q
gs
Q
gd
∗
∗
∗
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
1.4−
0.3
− nC
−
0.3
− nC
−−nC
zBody diode characteristics (Source-drain)
V
SD
−−−1.2 V I
S
= −200mA, V
GS
=0VForward voltage
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
∗Pulsed
∗
3/4
www.rohm.com
○
c
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
Data Sheet RZE002P02
zElectrical characteristics curves
0
0.05
0.1
0.15
0.2
0246810
Ta=25°C
Pulsed
V
GS
= -1.0V
V
GS
= -1.2V
V
GS
= -4.5V
V
GS
= -2.5V
V
GS
= -1.8V
V
GS
= -1.5V
0
0.05
0.1
0.15
0.2
0 0.2 0.4 0.6 0.8 1
V
GS
= -2.5V
V
GS
= -2.0V
V
GS
= -1.8V
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -3.2V
V
GS
= -1.2V
V
GS
= -1.0V
V
GS
= -1.5V
Ta=25°C
Pulsed
0.0001
0.001
0.01
0.1
1
00.511.5
V
DS
= -10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
100
1000
10000
0.001 0.01 0.1 1
V
GS
= -1.2V
V
GS
= -1.5V
V
GS
= -1.8V
V
GS
= -2.5V
V
GS
= -4.5V
Ta=25°C
Pulsed
100
1000
10000
0.001 0.01 0.1 1
V
GS
= -2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
1000
10000
0.001 0.01 0.1 1
V
GS
= -4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
1000
10000
0.001 0.01 0.1 1
V
GS
= -1.8V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Fig.1 Typical Output Characteristics(
Ⅰ
) Fig.2 Typical Output Characteristics(
Ⅱ
)
Fig.3 Typical Transfer Characteristics
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅰ
)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅱ
)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅲ
)
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅳ
)
DRAIN CURRENT : -I
D
[A]
DRAIN-SOURCE VOLTAGE : -V
DS
[V] DRAIN-SOURCE VOLTAGE : -V
DS
[V]
DRAIN CURRENT : -I
D
[A]
DRAIN CURRENT : -I
D
[A]
GATE-SOURCE VOLTAGE : -V
GS
[V]
DRAIN-CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
Ω
]
DRAIN-CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
Ω
]
DRAIN-CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
Ω
]
DRAIN-CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
Ω
]
100
1000
10000
0.001 0.01 0.1
V
GS
= -1.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅴ
)
DRAIN-CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
Ω
]
100
1000
10000
0.001 0.01 0.1
V
GS
= -1.2V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
DRAIN-CURRENT : -I
D
[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅵ
)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
Ω
]
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RZE002P02TL

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MOSFET 1.2V DRVE PCH MOSFET
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