OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

DMN30H14DLY-13

P1-P3P4-P6
DMN30H14DLY
Document number: DS36812 Rev. 2 - 2
1 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN30H14DLY
ADVANCED INFORMATION
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
300V
14 @ V
GS
= 10V
0.21A
20 @ V
GS
= 4.5V
0.17A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
Features
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT89
• Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Finish annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Weight: 0.052 grams (approximate)
Ordering Information (Note 4)
Part Number Compliance Case Quantity per reel
DMN30H14DLY-13 Standard SOT89 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
Equivalent Circuit
D
S
G
SOT89
Top View
Pin-out Top
H4
Y
YWW
= Manufacturer’s Marking
H4Y = Marking Code
YWW = Date Code Marking
Y= Year (ex: 4 = 2014)
WW = Week (01 - 53)
e3
DMN30H14DLY
Document number: DS36812 Rev. 2 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN30H14DLY
ADVANCED INFORMATION
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
300 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
0.21
0.16
A
Pulsed Drain Current (10s pulse, duty cycle ≦1%)
I
DM
1
A
Maximum Body Diode Continuous Current (Note 6)
I
S
2
A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
0.9
W
(Note 6) 2.2
Thermal Resistance, Junction to Ambient
(Note 5)
R
θ
JA
132
°C/W
(Note 6) 55
Thermal Resistance, Junction to Case
(Note 6)
R
θ
JC
9.6
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
300
⎯ ⎯
V
V
GS
= 0V,
I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
1 µA
V
DS
= 240V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯ ⎯
±100 nA
V
GS
=
±20V,
V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1
⎯
3 V
V
DS
= V
GS
,
I
D
= 250µA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
6 14
Ω
V
GS
= 10V,
I
D
=
0.3A
⎯
6 20
V
GS
= 4.5V,
I
D
=
0.2A
Diode Forward Voltage
V
SD
⎯
0.7 1.2 V
V
GS
= 0V, I
S
= 0.3A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
96
⎯
pF
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
⎯
5.8
⎯
Reverse Transfer Capacitance
C
rss
⎯
3.2
⎯
Gate Resistance
R
G
⎯
12
⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
⎯
4
⎯
nC
V
DS
= 192V, V
GS
= 10V,
I
D
= 0.5A
Gate-Source Charge
Q
gs
⎯
0.3
⎯
Gate-Drain Charge
Q
gd
⎯
1.9
⎯
Turn-On Delay Time
t
D(on)
⎯
3.3
⎯
nS
V
DS
= 60V, R
L
=200
V
GS
= 10V, R
G
= 25
Turn-On Rise Time
t
r
⎯
8.6
⎯
Turn-Off Delay Time
t
D(off)
⎯
22
⎯
Turn-Off Fall Time
t
f
⎯
12
⎯
Reverse Recovery Time
t
rr
⎯
43
⎯
nS
V
R
= 100V, I
F
=1.0A, di/dt=100A/µs
Reverse Recovery Charge
Q
rr
⎯
47
⎯
nC
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing
DMN30H14DLY
Document number: DS36812 Rev. 2 - 2
3 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN30H14DLY
ADVANCED INFORMATION
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0246810
V= 2.2V
GS
V= 2.5V
GS
V= 3.0V
GS
V= 4.5V
GS
V = 20V
GS
V = 10V
GS
V =4.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0
0.1
0.2
0.3
0.4
0.5
00.511.522.533.54
V = 10V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
4
5
6
7
8
9
10
11
12
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
V = 4.5V
GS
V = 10V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristics
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
5
7
9
11
13
15
02468101214161820
I = 300mA
D
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
2
4
6
8
10
12
14
16
18
20
0 0.1 0.2 0.3 0.4 0.5 0.6
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 10V
GS
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 -25 0 25 50 75 100 125 150
V=5V
I = 100mA
GS
D
V=V
I = 100mA
GS
D
10
P1-P3P4-P6

DMN30H14DLY-13

Mfr. #:
Buy DMN30H14DLY-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 300V N-Ch Enh Mode 20Vgss 96pF 4nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet