2010-08-16
BFP520
1
2
3
4
NPN Silicon RF Transistor
• Low noise amplifier designed for low voltage
applications, ideal for 1.2 V or 1.8 V supply
voltage. Supports 2.9 V V
cc
with enough external
collector resistance.
• High gain and low noise at high frequencies
due to high transit frequency f
T
= 45 GHz
• Finds usage e.g. in cordless phones and
satellite receivers
• Pb-free (RoHS compliant) standard package
with visible leads
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP520 APs
1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings at T
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage
T
= -55 °C
V
CEO
2.5
2.4
V
Collector-emitter voltage V
10
Collector-base voltage V
10
Emitter-base voltage V
1
Collector current I
40 mA
Base current I
4
Total power dissipation
1)
T
≤ 105 °C
P
tot
100 mW
Junction temperature T
150 °C
Storage temperature T
-55 ... 150
1
T
S
is measured on the emitter lead at the soldering point to pcb
