IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BTA2008-600E
3Q Hi-Com Triac
28 September 2016 Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package. This
"series E" triac balances the requirements of commutation performance and gate sensitivity and is
intended for interfacing with low power drivers and logic ICs including microcontrollers.
2. Features and benefits
3Q technology for improved noise immunity
Direct gate triggering from low power drivers and logic ICs
High commutation capability with sensitive gate
High voltage capability
Planar passivated for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Triggering in three quadrants only
3. Applications
Low power motor controls
Small inductive loads e.g. solenoids, door locks, water valves
Small loads in large white goods
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 600 V
I
T(RMS)
RMS on-state current full sine wave; T
lead
≤ 70 °C; Fig. 1;
Fig. 2; Fig. 3
- - 0.8 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 9 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- - 9.9 A
T
j
junction temperature - - 125 °C
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
0.5 - 10 mAI
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
0.5 - 10 mA
WeEn Semiconductors
BTA2008-600E
3Q Hi-Com Triac
BTA2008-600E All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 28 September 2016 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
0.5 - 10 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - - 12 mA
V
T
on-state voltage I
T
= 0.85 A; T
j
= 25 °C; Fig. 10 - 1.35 1.6 V
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
600 - - V/µs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C;
I
T(RMS)
= 0.8 A; dV
com
/dt = 10 V/µs;
gate open circuit
1.6 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T2 main terminal 2
2 G gate
3 T1 main terminal 1
123
TO-92 (SOT54)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BTA2008-600E TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54

BTA2008-800E,412

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs Thyristor TRIAC 800V 9.9A 3-Pin SPT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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