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IXGP24N60C4D1

P1-P2
© 2011 IXYS CORPORATION, All Rights Reserved
High-Gain IGBT
w/ Diode
IXGP24N60C4D1
V
CES
= 600V
I
C110
= 24A
V
CE(sat)
≤ ≤
≤ ≤
≤
2.70V
t
fi(typ)
= 44ns
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
4.0 6.5 V
I
CES
V
CE
= V
CES
,
V
GE
= 0V 10 μA
T
J
= 125°C 1.5 mA
I
GES
V
CE
= 0V, V
GE
= ±20V ±100 nA
V
CE(sat)
I
C
= I
C110
, V
GE
= 15V, Note 1 2.10 2.70 V
T
J
= 125°C 1.95 V
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C 56 A
I
C110
T
C
= 110°C 24 A
I
F110
T
C
= 110°C 30 A
I
CM
T
C
= 25°C, 1ms 130 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 10Ω I
CM
= 48 A
(RBSOA) Clamped Inductive Load @ ≤ V
CES
P
C
T
C
= 25°C 190 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque 1.13/10 Nm/lb.in.
Weight 3 g
DS100257A(04/11)
High-Speed PT Trench IGBT
Features
z
Optimized for Low Switching Losses
z
Square RBSOA
z
Anti-Parallel Ultra Fast Diode
z
International Standard Package
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
G = Gate C = Collector
E = Emitter Tab = Collector
TO-220
G
C
E
Tab
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGP24N60C4D1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= I
C110
, V
CE
= 10V, Note 1 10 17 S
C
ie
s
875 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 62 pF
C
res
28 pF
Q
g
64 nC
Q
ge
I
C
= I
C110
, V
GE
= 15V, V
CE
= 0.5 • V
CES
7 nC
Q
gc
28 nC
t
d(on)
22 ns
t
ri
43 ns
E
on
0.35 mJ
t
d(off)
192 ns
t
fi
44 ns
E
of
f
0.34 0.60 mJ
t
d(on)
20 ns
t
ri
32 ns
E
on
0.37 mJ
t
d(off)
148 ns
t
fi
115 ns
E
off
0.52 mJ
R
thJC
0.65 °C/W
R
thCS
0.21 °C/W
Inductive Load, T
J
= 25°C
I
C
= I
C110
, V
GE
= 15V
V
CE
= 360V, R
G
= 10Ω
Note 2
Inductive Load, T
J
= 125°C
I
C
= I
C110
, V
GE
= 15V
V
CE
= 360V, R
G
= 10Ω
Note 2
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
Pins: 1 - Gate 2 - Collector
3 - Emitter
TO-220 (IXGP) Outline
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 10A, V
GE
= 0V, Note 1 3.0 V
I
RM
2.5 A
t
rr
110 ns
t
rr
30 ns
R
thJC
2.5 °C/W
I
F
= 12A, V
GE
= 0V,
-di
F
/dt = 100A/μs, V
R
= 100V, T
J
= 125°C
I
F
= 1A, V
GE
= 0V, -di
F
/dt = 100A/μs, V
R
= 30V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
P1-P2

IXGP24N60C4D1

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IGBT 600V 56A 190W TO220
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