PMV25ENEAR Datasheet PMV25ENEAR | P7-P9

NXP Semiconductors

PMV25ENEA

30 V, N-channel Trench MOSFET

Product data sheet 26 February 2016 6 / 15

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source

breakdown voltage

I

D

= 250 µA; V

GS

= 0 V; T

j

= 25 °C 30 - - V

V

GSth

gate-source threshold

voltage

I

D

= 250 µA; V

DS

=V

GS

; T

j

= 25 °C 1 1.5 2.5 V

I

DSS

drain leakage current V

DS

= 30 V; V

GS

= 0 V; T

j

= 25 °C - - 1 µA

V

GS

= 20 V; V

DS

= 0 V; T

j

= 25 °C - - 10 µA

V

GS

= -20 V; V

DS

= 0 V; T

j

= 25 °C - - -10 µA

V

GS

= 10 V; V

DS

= 0 V; T

j

= 25 °C - - 5 µA

I

GSS

gate leakage current

V

GS

= -10 V; V

DS

= 0 V; T

j

= 25 °C - - -5 µA

V

GS

= 10 V; I

D

= 5.5 A; T

j

= 25 °C - 17 24 mΩ

V

GS

= 10 V; I

D

= 5.5 A; T

j

= 150 °C - 28 39 mΩ

R

DSon

drain-source on-state

resistance

V

GS

= 4.5 V; I

D

= 4.8 A; T

j

= 25 °C - 22 32 mΩ

g

fs

forward

transconductance

V

DS

= 10 V; I

D

= 5.5 A; T

j

= 25 °C - 24 - S

R

G

gate resistance f = 1 MHz - 8 - Ω

Dynamic characteristics

Q

G(tot)

total gate charge - 12.6 18 nC

Q

GS

gate-source charge - 1.2 - nC

Q

GD

gate-drain charge

V

DS

= 15 V; I

D

= 5.5 A; V

GS

= 10 V;

T

j

= 25 °C

- 2.7 - nC

C

iss

input capacitance - 597 - pF

C

oss

output capacitance - 117 - pF

C

rss

reverse transfer

capacitance

V

DS

= 15 V; f = 1 MHz; V

GS

= 0 V;

T

j

= 25 °C

- 94 - pF

t

d(on)

turn-on delay time - 8 - ns

t

r

rise time - 23 - ns

t

d(off)

turn-off delay time - 33 - ns

t

f

fall time

V

DS

= 15 V; I

D

= 5.5 A; V

GS

= 10 V;

R

G(ext)

= 6 Ω; T

j

= 25 °C

- 30 - ns

Source-drain diode

V

SD

source-drain voltage I

S

= 1.08 A; V

GS

= 0 V; T

j

= 25 °C - 0.7 1.2 V

NXP Semiconductors

PMV25ENEA

30 V, N-channel Trench MOSFET

Product data sheet 26 February 2016 7 / 15

V

DS

(V)

0 542 31

aaa-021710

10

15

5

20

25

I

D

(A)

0

2.5 V

V

GS

= 10 V

4.5 V

3.0 V

2.9 V

2.7 V

T

j

= 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

aaa-021711

V

GS

(V)

0 321

10

-4

10

-5

10

-3

I

D

(A)

10

-6

min typ max

T

j

= 25 °C; V

DS

= 5 V

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

I

D

(A)

0 252010 155

aaa-021712

70

R

DSon

(mΩ)

50

30

10

0

20

40

60

V

GS

= 10 V

4.5 V

3.0 V2.8 V2.7 V

3.5 V

T

j

= 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

aaa-021713

100

50

150

200

R

DSon

(mΩ)

0

V

GS

(V)

0 1084 62

Tj = 150 °C

Tj = 25 °C

I

D

= 5.3 A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

NXP Semiconductors

PMV25ENEA

30 V, N-channel Trench MOSFET

Product data sheet 26 February 2016 8 / 15

V

GS

(V)

0 431 2

aaa-021714

16

20

12

8

4

24

28

I

D

(A)

0

Tj = 150 °C

Tj = 25 °C

V

DS

> I

D

× R

DSon

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

T

j

(°C)

-60 1801200 60

aaa-021715

1.0

0.5

1.5

2.0

a

0

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

T

j

(°C)

-60 1801200 60

aaa-021716

2

1

3

4

0

V

GS(th)

(V)

min

typ

max

I

D

= 0.25 mA; V

DS

= V

GS

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

aaa-021717

V

DS

(V)

10

-1

10

2

101

10

2

10

3

C

(pF)

10

C

iss

C

oss

C

rss

f = 1 MHz; V

GS

= 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PMV25ENEAR

PMV25ENEAR

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