BAS116LP3-7 Datasheet BAS116LP3-7 | P1-P3

BAS116LP3

Document number: DS35241 Rev. 6 - 2

1 of 4

www.diodes.com

April 2013

BAS116LP3

NEW PRODUCT

ULTRA-SMALL SURFACE MOUNT LOW LEAKAGE DIODE

Features

 Ultra-Small Leadless Surface Mount Package (0.6 x 0.3mm)

 Ultra-Low Profile Package (0.3mm)

 Very Low Leakage Current

 Low Capacitance

 Ideal for Compact Battery Powered Portable Electronics

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

 Case: X3-DFN0603-2

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: Cathode Bar

 Terminals: Finish Matte Tin Finish over Copper Leadframe

 (Lead Free Plating). Solderable per MIL-STD-202, Method 208

 Weight: 0.2mg (Approximate)

Ordering Information (Note 4)

Part Number Case Packaging

BAS116LP3-7 X3-DFN0603-2 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

BA = Product Type Marking Code

Bar Denotes Cathode Side

Top View Bottom View

BA

e3

BAS116LP3

Document number: DS35241 Rev. 6 - 2

2 of 4

www.diodes.com

April 2013

BAS116LP3

NEW PRODUCT

Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

V

alue Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V

RRM

V

RWM

V

R

85 V

RMS Reverse Voltage

V

R(RMS)

60 V

Forward Continuous Current (Note 5)

I

FM

215 mA

Repetitive Peak Forward Current

I

FRM

500 mA

Non-Repetitive Peak Forward Surge Current @ t = 1.0µs

@ t = 1.0ms

@ t = 1.0s

I

FSM

4.0

1.0

0.5

A

Thermal Characteristics

Characteristic Symbol

V

alue Unit

Power Dissipation (Note 5)

P

D

250 mW

Thermal Resistance Junction to Ambient Air (Note 6)

R

θJA

500

C/W

Operating and Storage Temperature Range

T

J

, T

STG

-65 to +150 °C

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 6)

V

(BR)R

85

 

V

I

R

= 100µA

Forward Voltage

V

F



0.75

0.9

1.0

1.15

0.95

1.10

1.20

1.35

V

I

F

= 1.0mA

I

F

= 10mA

I

F

= 50mA

I

F

= 150mA

Leakage Current (Note 6)

I

R

 

10.0

100

500

nA

V

R

= 75V

V

R

= 1V, T

J

= +150°C

V

R

= 75V, T

J

= +150°C

Total Capacitance

C

T



1.6 3.0 pF

V

R

= 0, f = 1.0MHz

Reverse Recovery Time

t

rr



120 3000 ns

I

F

= I

R

= 10mA,

I

rr

= 0.1 x I

R

, R

L

= 100

Notes: 5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0

0 25 50 75 100 125 150

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N (mW)

D

T , AMBIENT TEMPERATURE (°C)

Figure 1 Power Derating Curve, Total Package

A

50

100

150

200

250

300

I , INSTANTANEOUS FORWARD CURRENT (mA)

F

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Figure 2 Typical Forward Characteristics

F

0.1

1

10

100

1,000

0 0.4 0.8 1.2 1.6

T = 150ºC

A

T = -55ºC

A

T = 125ºC

A

T = 85ºC

A

T = 25ºC

A

BAS116LP3

Document number: DS35241 Rev. 6 - 2

3 of 4

www.diodes.com

April 2013

BAS116LP3

NEW PRODUCT

I , INSTANTANEOUS REVERSE CURRENT (nA)

R

0.1

1

10

100

0 102030405060708090100

V , INSTANTANEOUS REVERSE VOLTAGE (V)

Figure 3 Typical Reverse Characteristics

R

T = 125ºC

A

T = -55ºC

A

T = 85ºC

A

T = 25ºC

A

T = 150ºC

A

110100

V , DC REVERSE VOLTAGE (V)

Figure 4 Typical Total Capacitance vs. Reverse Voltage

R

C

,

T

O

T

AL

C

A

P

A

C

I

T

AN

C

E (pF)

T

0.4

0.8

1.2

1.6

0

2.0

f = 1MHz

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Bottom View

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X3-DFN0603-2

Dim Min Max Typ

A 0.27 0.35 0.30

A1 0.00 0.03 0.02

b 0.19 0.29 0.24

D 0.595 0.645 0.62

E 0.295 0.345 0.32

e - - 0.355

L 0.14 0.24 0.19

All Dimensions in mm

Dimensions Value (in mm)

C 0.380

X 0.230

Y 0.300

Z 0.610

Z

Y (2x)

X (2x)

C

L (2x)

E

b (2x)

D

A1 (2x)

A

e

BAS116LP3-7

BAS116LP3-7

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