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74ABT652APW,118

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74ABT652A_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 12 March 2010 7 of 19
NXP Semiconductors
74ABT652A
Octal transceiver/register; non-inverting; 3-state
7. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C.
8. Recommended operating conditions
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage −0.5 +7.0 V
V
I
input voltage
[1]
−1.2 +7.0 V
V
O
output voltage output in OFF-state or HIGH-state
[1]
−0.5 +5.5 V
I
IK
input clamping current V
I
< 0 V −18 - mA
I
OK
output clamping current V
O
< 0 V −50 - mA
I
O
output current output in LOW-state - 128 mA
T
j
junction temperature
[2]
- 150 °C
T
stg
storage temperature −65 +150 °C
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 4.5 - 5.5 V
V
I
input voltage 0 - V
CC
V
V
IH
HIGH-level input voltage 2.0 - - V
V
IL
LOW-level input voltage - - 0.8 V
I
OH
HIGH-level output current −32--mA
I
OL
LOW-level output current - - 64 mA
∆t/∆V input transition rise and fall rate 0 - 10 ns/V
T
amb
ambient temperature in free air −40 - +85 °C
74ABT652A_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 12 March 2010 8 of 19
NXP Semiconductors
74ABT652A
Octal transceiver/register; non-inverting; 3-state
9. Static characteristics
[1] For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.
[2] This parameter is valid for any V
CC
between 0 V and 2.1 V with a transition time of up to 10 ms. For V
CC
= 2.1 V to V
CC
=5V± 10 %, a
transition time of up to 100 µs is permitted.
[3] Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
[4] This is the increase in supply current for each input at 3.4 V.
[5] This data sheet limit may vary among suppliers.
Table 6. Static characteristics
Symbol Parameter Conditions 25 °C −40 °Cto+85°C Unit
Min Typ Max Min Max
V
IK
input clamping voltage V
CC
= 4.5 V; I
IK
= −18 mA −1.2 −0.9 - −1.2 - V
V
OH
HIGH-level output
voltage
V
I
= V
IL
or V
IH
V
CC
= 4.5 V; I
OH
= −3 mA 2.5 3.0 - 2.5 - V
V
CC
= 5.0 V; I
OH
= −3 mA 3.0 3.5 - 3.0 - V
V
CC
= 4.5 V; I
OH
= −32 mA 2.0 2.4 - 2.0 - V
V
OL
LOW-level output voltage V
CC
= 4.5 V; I
OL
=64mA;
V
I
=V
IL
or V
IH
- 0.3 0.55 - 0.55 V
V
OL(pu)
power-up LOW-level
output voltage
V
CC
= 5.5 V; I
O
= 1 mA;
V
I
= GND or V
CC
[1]
- 0.13 0.55 - 0.55 V
I
I
input leakage current V
CC
= 5.5 V; V
I
= GND or 5.5 V
control pins - ±0.01 ±1.0 - ±1.0 µA
data pins - ±5 ±100 - ±100 µA
I
OFF
power-off leakage current V
CC
= 0 V; V
I
or V
O
≤ 4.5 V - ±5.0 ±100 - ±100 µA
I
O(pu/pd)
power-up/power-down
output current
V
CC
= 2.1 V; V
O
= 0.5 V;
V
I
= GND or V
CC
; OEAB, OEBA
don’t care
[2]
- ±5.0 ±50 - ±50 µA
I
OZ
OFF-state output current V
CC
= 5.5 V; V
I
=V
IL
or V
IH
V
O
= 2.7 V - 5.0 50 - 50 µA
V
O
= 0.5 V - −5.0 −50 - −50 µA
I
LO
output leakage current V
CC
= 5.5 V; HIGH-state;
V
O
= 5.5 V; V
I
= GND or V
CC
- 5.0 50 - 50 µA
I
O
output current V
CC
= 5.5 V; V
O
= 2.5 V
[3][5]
−180 −65 −40 −180 −40 mA
I
CC
supply current V
CC
= 5.5 V; V
I
= GND or V
CC
outputs HIGH-state - 110 250 - 250 µA
outputs LOW-state - 20 30 - 30 mA
outputs disabled - 110 250 - 250 µA
∆I
CC
additional supply current per input pin; V
CC
= 5.5 V; one
input at 3.4 V; other inputs at V
CC
or GND
[4]
- 0.3 1.5 - 1.5 mA
C
I
input capacitance V
I
= 0 V or V
CC
-4- - -pF
C
O
output capacitance outputs disabled; V
O
=0V
or V
CC
-7- - -pF
74ABT652A_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 12 March 2010 9 of 19
NXP Semiconductors
74ABT652A
Octal transceiver/register; non-inverting; 3-state
10. Dynamic characteristics
[1] This data sheet limit may vary among suppliers.
Table 7. Dynamic characteristics
GND = 0 V; for test circuit, see Figure 12.
Symbol Parameter Conditions 25 °C; V
CC
= 5.0 V −40 °C to +85 °C;
V
CC
= 5.0 V ± 0.5 V
Unit
Min Typ Max Min Max
f
max
maximum
frequency
see Figure 6 125 300 - 125 - MHz
t
PLH
LOW to HIGH
propagation delay
CPAB to Bn or CPBA to An; see Figure 6 2.2 3.7 5.1 2.2 5.6 ns
An to Bn or Bn to An; see
Figure 7 1.5 3.0 4.3 1.5 4.8 ns
SAB to Bn or SBA to An; see
Figure 8 1.5 3.5 5.1 1.5 6.5 ns
t
PHL
HIGH to LOW
propagation delay
CPAB to Bn or CPBA to An; see Figure 6 1.7 4.3 5.1 1.7 5.6 ns
An to Bn or Bn to An; see
Figure 7 1.5 3.6 4.6 1.5 5.4 ns
SAB to Bn or SBA to An; see
Figure 8 1.5 4.2 5.2
[1]
1.5 5.9 ns
t
PZH
OFF-state to HIGH
propagation delay
OEBA to An; see Figure 10 2 3.2 4.6 2 5.8 ns
OEAB to Bn; see
Figure 10 2 3.5 6.1 2 6.5 ns
t
PZL
OFF-state to LOW
propagation delay
OEBA to An; see Figure 11 3 4.5 6.8 3 8.5 ns
OEAB to Bn; see
Figure 11 3 4.7 6.5 3 7.4 ns
t
PHZ
HIGH to OFF-state
propagation delay
OEBA to An; see Figure 10 1.5 3.9 4.7
[1]
1.5 5.3
[1]
ns
OEAB to Bn; see
Figure 10 1.5 3.8 4.6
[1]
1.5 5.5 ns
t
PLZ
LOW to OFF-state
propagation delay
OEBA to An; see Figure 11 1.5 2.9 3.8 1.5 4.1 ns
OEAB to Bn; see
Figure 11 1.5 3.0 4.4 1.5 5.1 ns
t
su(H)
set-up time HIGH An to CPAB, Bn to CPBA; see Figure 9 3.0 0.7 - 3.0 - ns
t
su(L)
set-up time LOW An to CPAB, Bn to CPBA; see Figure 9 3.0 0.7 - 3.0 - ns
t
h(H)
hold time HIGH An to CPAB, Bn to CPBA; see Figure 9 0.0 −0.5 - 0.0 - ns
t
h(L)
hold time LOW An to CPAB, Bn to CPBA; see Figure 9 0.0 −0.5 - 0.0 - ns
t
WH
pulse width HIGH CPAB, CPBA; see Figure 6 4.0 1.0 - 4.0 - ns
t
WL
pulse width LOW CPAB, CPBA; see Figure 6 4.0 1.0 - 4.0 - ns
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74ABT652APW,118

Mfr. #:
Buy 74ABT652APW,118
Manufacturer:
NXP Semiconductors
Description:
IC TXRX NON-INVERT 5.5V 24TSSOP
Lifecycle:
New from this manufacturer.
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