IXGA12N60CD1

© 2002 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C; R
GE
= 1 M 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C24A
I
C90
T
C
= 90°C12A
I
CM
T
C
= 25°C, 1 ms 48 A
SSOA V
GE
= 15 V, T
VJ
= 125°C, R
G
= 33 I
CM
= 24 A
(RBSOA) Clamped inductive load, L = 300 µH @ 0.8 V
CES
P
C
T
C
= 25°C 100 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque with screw M3 0.45/4 Nm/lb.in.
Mounting torque with screw M3.5 0.55/5 Nm/lb.in.
Weight 4g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Features
Very high frequency IGBT
New generation HDMOS
TM
process
International standard package
JEDEC TO-220AB and TO-263AA
High peak current handling capability
Applications
PFC circuit
AC motor speed control
DC servo and robot drives
Switch-mode and resonant-mode
power supplies
High power audio amplifiers
Advantages
Fast switching speed
High power density
98513C (2/02)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
BV
CES
I
C
= 250 µA, V
GE
= 0 V 600 V
V
GE(th)
I
C
= 250 µA, V
GE
= V
GE
2.5 5.0 V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25°C 200 µA
V
GE
= 0 V T
J
= 125°C 1.5 mA
I
GES
V
CE
= 0 V, V
GE
= ±20 V ±100 nA
V
CE(sat)
I
C
= I
CE90
, V
GE
= 15 V 2.1 2.7 V
HiPerFAST
TM
IGBT
Lightspeed
TM
Series
V
CES
= 600 V
I
C25
= 24 A
V
CE(sat)
= 2.7 V
t
fi(typ)
= 55 ns
IXGA 12N60CD1
IXGP 12N60CD1
TO-220 AB
(IXGP)
G = Gate C = Collector
E = Emitter TAB = Collector
E
C
G
G
E
TO-263 (IXGA)
C (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
I
C
= I
C90
; V
CE
= 10 V, 5 11 S
Pulse test, t 300 µs, duty cycle 2 %
C
ies
860 pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 100 pF
C
res
15 pF
Q
g
32 nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
10 nC
Q
gc
10 nC
t
d(on)
20 ns
t
ri
20 ns
t
d(off)
60 ns
t
fi
55 ns
E
off
0.09 mJ
t
d(on)
20 ns
t
ri
20 ns
E
on
0.5 mJ
t
d(off)
85 180 ns
t
fi
85 180 ns
E
off
0.27 0.60 mJ
R
thJC
IGBT 1.25 K/W
R
thCK
0.25 K/W
Inductive load, T
J
= 25
°°
°°
°C
I
C
= I
C90
, V
GE
= 15 V, L = 300 µH
V
CE
= 0.8 V
CES
, R
G
= R
off
= 18
Remarks: Switching times may increase for
V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125
°°
°°
°C
I
C
= I
C90
, V
GE
= 15 V, L = 300 µH
V
CE
= 0.8 V
CES
, R
G
= R
off
= 18
Remarks: Switching times may increase for
V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Reverse Diode (FRED) Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
F
= 15A; T
VJ
= 150°C 1.7 V
T
VJ
= 25°C 2.5 V
I
RM
V
R
= 100 V; I
F
=25A; -di
F
/dt = 100 A/µs 2 2.5 A
L < 0.05 µH; T
VJ
= 100°C
t
rr
I
F
= 1 A; -di/dt = 50 A/µs;
V
R
= 30 V T
J
= 25°C35ns
R
thJC
Diode 1.6 K/W
TO-263 AA (IXGA) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-220 AB (IXGP) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
Min. Recommended Footprint
IXGA 12N60CD1
IXGP 12N60CD1

IXGA12N60CD1

Mfr. #:
Manufacturer:
Littelfuse
Description:
IGBT Transistors 24 Amps 600V 2.7 Rds
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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