SUD06N10-225L
Vishay Siliconix
www.vishay.com
2
Document Number: 71253
S−42350—Rev. B, 20-Dec-04
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ
a
Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
100
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA 1.0 3.0
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100 nA
V
DS
= 100 V, V
GS
= 0 V 1
Zero Gate Voltage Drain Current I
DSS
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125_C 50
mA
V
DS
= 100 V, V
GS
= 0 V, T
J
= 175_C 250
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V 8.0 A
V
GS
= 10 V, I
D
= 3 A 0.160 0.200
Drain Source On State Resistance
b
V
GS
= 10 V, I
D
= 3 A, T
J
= 125_C 0.350
Drain-Source On-State Resistance
r
DS(on)
V
GS
= 10 V, I
D
= 3 A, T
J
= 175_C 0.450
W
V
GS
= 4.5 V, I
D
= 1.0 A 0.180 0.225
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 3 A 8.5 S
Dynamic
a
Input Capacitance C
iss
240
Output Capacitance C
oss
V
GS
= 0 V, V
DS
= 25 V, F = 1 MHz
42 pF
Reverse Transfer Capacitance C
rss
17
Total Gate Charge
c
Q
g
2.7 4.0
Gate-Source Charge
c
Q
gs
V
DS
= 50 V, V
GS
= 5 V, I
D
= 6.5 A
0.6
nC
Gate-Drain Charge
c
Q
gd
0.7
Turn-On Delay Time
c
t
d(on)
7 11
Rise Time
c
t
r
V
DD
= 50 V, R
L
= 7.5 W
8 12
Turn-Off Delay Time
c
t
d(off)
,
.
I
D
^ 6.5 A, V
GEN
= 10 V, R
g
= 2.5 W
8 12
ns
Fall Time
c
t
f
9 14
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current I
SM
8.0 A
Diode Forward Voltage
b
V
SD
I
F
= 6.5 A, V
GS
= 0 V 0.9 1.3 V
Source-Drain Reverse Recovery Time t
rr
I
F
= 6.5 A, di/dt = 100 A/ms 35 60 ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v
300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
