MPS6531
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
MPS6531
This device is designed for use as a medium power amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 19. See PN2222A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 1.0 A
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteristic Max Units
MPS6531
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
R
θ
JC
Thermal Resistance, Junction to Case 83.3 °C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 200
°C/W
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
