SMD ESD Protection Diode
Page 2
QW-G7072
REV:C
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
Rating and Curves Characteristic
Power Rating, (%)
Fig. 4 - Power Rating Derating Curve
Ambient Temperature, ( °C )
20
40
60
80
100
Mounting on glass epoxy PCBs
Capacitance Between Terminals, (PF)
Fig.2 - Typical Capacitance Between
Terminals Characteristics
Reverse Voltage, (V)
0
5
10
15
25
01234
5
Reverse Current, ( A )
Fig.1 - Reverse Characteristics
Reverse Voltage, (%)
02040
60
100
100n
1u
10u
10n
80
0 25 50 75 100 125
20
Electrical Characteristics (at TA=25°C unless otherwise noted)
Symbol
Typ
Parameter
Min
Max
Unit
Junction capacitance
Conditions
Diode breakdown voltage
V
BD V
IR = 1mA
Reverse leakage current
I
L nA
30
C
T
pF
V
R =0V,f =1MHz
5.6 9.4
24
90
V
R = 5V
ESD capability
kV
±30
Storage temperature
Operation temperature
+150
°C
T
STG
Tj
°C
+150-40
ESD
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
Clamping Voltage
8
V
V
c
IPP = 11 A, tp=8/20us
I
PP = 1 A, tp=8/20us
V
c
V
12
-40
-
5
-
-
-
-
-
-
-
-
-
-
Reverse stand-Off voltage
V
RWM
5
V
--
Fig.3 - Clamping Voltage vs.
Peak Pulse Current
Clamping Voltage, (V)
Peak Pulse Current, (A)
0
16
14
12
10
8
6
4
2
024681012
Waveform
Parameters:
tr=8us
td=20us
