Electrical characteristics ST1S12XX, ST1S12XX12, ST1S12XX18
6/20 Doc ID 14314 Rev 5
4 Electrical characteristics
V
IN
= V
EN
= 3.6 V, C
IN
= 4.7 µF, C
O
= 10 µF, L = 2.2 µH, T
J
= - 40 to 125 °C (unless
otherwise specified. Typical values are referred to 25 °C).
Table 6. Electrical characteristics for ST1S12G
Symbol Parameter Test conditions Min. Typ. Max. Unit
FB Feedback voltage T
J
= -40 to 125°C 582 600 618 mV
I
FB
V
FB
pin bias current -50 50 nA
V
IN
Minimum input voltage I
O
= 10mA to 0.7A 2.5 V
I
Q
Quiescent current
V
IN
= V
EN,
V
FB
= 0.65V 500 650 µA
V
EN
= 0, T
J
= -40°C to 85°C 1 µA
I
O
Output current V
IN
= 2.5V to 5.5 V
(1)
0.7 A
V
EN
Enable threshold
Device ON, V
IN
= 2.5V to 5.5V 1.5
V
Device OFF 0.5
I
EN
Enable pin current 1 µA
%V
O
/ΔV
IN
Reference line regulation V
IN
= 2.5V to 5.5V
(1)
0.05 0.1 %V
O
/ΔV
IN
%V
O
/ΔI
O
Reference load regulation I
O
= 10 mA to 700mA
(1)
0.0025 0.005 %V
O
/mA
PWMf
S
PWM switching frequency 1.16 1.7 2.08 MHz
D
MAX
Maximum duty cycle 100 %
R
DSON
-N NMOS switch on resistance I
SW
= 100mA 0.25 0.4 Ω
R
DSON
-P PMOS switch on resistance I
SW
= 100mA 0.25 0.45 Ω
I
SWL
Switching current limitation
(1)
1.6 A
ν Efficiency
(1)
I
O
= 10mA to 100 mA, V
O
= 1.8V 80
%
I
O
= 100mA to 0.7A, V
O
= 1.8V 90
T
SHDN
Thermal shutdown 130 150 °C
T
HYS
Thermal shutdown hysteresis 15 °C
%V
O
/ΔI
O
Load transient response
I
O
= 100mA to 700mA, T
A
= 25°C
t
R
= t
F
≥ 200ns, C
O
=22µF
(1)
-5 +5 %V
O
%V
O
/ΔI
O
Short circuit removal
response
I
O
= 10mA to I
O
= short,
T
A
= 25°C
(1)
-10 +10 %V
O
1. Guaranteed by design, but not tested in production.
