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VS-HFA04SD60S-M3

P1-P3P4-P6P7-P8
VS-HFA04SD60S-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Nov-16
4
Document Number: 93473
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
50
40
20
100
1000
dI
F
/dt (A/µs)
t
rr
(ns)
30
I
F
= 8 A
I
F
= 4 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
14
10
0
100 1000
dI
F
/dt (A/µs)
I
RR
(A)
4
I
F
= 8 A
I
F
= 4 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
2
6
8
12
200
160
20
100
1000
dI
F
/dt (A/µs)
Q
rr
(nC)
60
I
F
= 8 A
I
F
= 4 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
40
80
120
180
100
140
1000
100
100
1000
dI
F
/dt (A/µs)
dI
(rec)M
/dt (A/µs)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 8 A
I
F
= 4 A
VS-HFA04SD60S-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Nov-16
5
Document Number: 93473
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-HFA04SD60S-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Nov-16
6
Document Number: 93473
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-HFA04SD60S-M3 75 3000 Antistatic plastic tube
VS-HFA04SD60STR-M3 2000 2000 13" diameter reel
VS-HFA04SD60SL-M3 3000 3000 13" diameter reel
VS-HFA04SD60SR-M3 3000 3000 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95627
Part marking information www.vishay.com/doc?95176
Packaging information www.vishay.com/doc?95033
P1-P3P4-P6P7-P8

VS-HFA04SD60S-M3

Mfr. #:
Buy VS-HFA04SD60S-M3
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching 4A 600V Ultrafast 17ns HEXFRED
Lifecycle:
New from this manufacturer.
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